Inventor

LEE SE HO

KR95 patents

⚠️ This page may combine multiple inventors who share the name “LEE SE HO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEE SE HO

SAMSUNG ELECTRONICS CO LTD

Phase change memory devices having phase change area in porous dielectric layer

Low-current and high-speed phase-change memory devices and methods of driving the same

Phase-changeable memory devices having phase-changeable material regions with lateral contacts and methods of fabrication therefor

Phase change memory devices and their methods of fabrication

Methods of fabricating phase change memory cells having a cell diode and a bottom electrode self-aligned with each other

Low-current and high-speed phase-change memory devices and methods of driving the same

Phase changeable memory cells and methods of fabricating the same

Methods for fabrication for phase-changeable memory devices having phase-changeable material regions with lateral contacts

Phase changeable memory devices and methods of forming the same in which an upper electrode includes a tip that extends toward a lower electrode

Phase-changeable devices having an insulating buffer layer and methods of fabricating the same

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Phase-change memory device having a barrier layer and manufacturing method

PRAMS having phase-change layer pattern with electrode contact area and methods of forming the same

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Phase change memory cells having a cell diode and a bottom electrode self-aligned with each other

Methods of forming fine patterns, and methods of forming trench isolation layers using the same

Semiconductor memory devices having offset transistors and methods of fabricating the same

SK HYNIX INC

Phase change memory device having multi-level and method of driving the same

Semiconductor device including dielectric structure having ferroelectric layer and non-ferroelectric layer

Resistive memory device and operation method thereof

Phase change memory device having multi-level and method of driving the same

Nonvolatile memory device including ferroelectric layer having negative capacitance

Nonvolatile memory device having three-dimensional structure

Semiconductor device having ferroelectric material and method of fabricating the same

Resistive memory device and operation method thereof

Memory system and operating method of the memory system

Controller and operating method thereof

Data storage apparatus and operating method thereof

Semiconductor memory apparatus and temperature control method thereof

Phase change memory device having multi-level and method of driving the same

SAMSUNG DISPLAY CO LTD

Organic light emitting diode display having an auxiliary member in contact with an upper surface of an auxiliary electrode

Organic light emitting display apparatus and method of manufacturing the same

Organic light-emitting display device and method of manufacturing the same

Display apparatus and tiled display apparatus

Method of manufacturing an organic light emitting diode display having an auxiliary member in contact with an upper surface of an auxiliary electrode

Organic light emitting display apparatus and method of manufacturing the same

Organic light-emitting display device and method of manufacturing the same

SK CHEMICALS CO LTD

Polyarylene sulfide resin and preparation method thereof

Polyarylene sulfide resin composition and a preparation method thereof

Polyarylene sulfide resin and preparation method thereof

Polyarylene sulfide resin composition and formed article

Polyarylene sulfide and a preparation method thereof

AMOTECH CO LTD

Antenna module

Radar antenna

Antenna package having cavity structure

PARK HAE CHAN

Circuit and method for generating reference voltage, phase change random access memory apparatus and read method using the same

Phase change memory device having a heater with a temperature dependent resistivity, method of manufacturing the same, and circuit of the same

KIM SUNG-GI

Polyarylene sulfide and preparation method thereof

SAMSUNG ELECTRONICS COL LTD

Phase change memory device and method for forming the same

JEONG WON-CHEOL

Multi-bit phase-change random access memory (PRAM) with diameter-controlled contacts and methods of fabricating and programming the same