Inventor
WANG SHULIN
US30 patents
⚠️ This page may combine multiple inventors who share the name “WANG SHULIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
27 patentsUS7172792B2Feb 6, 2007
Method for forming a high quality low temperature silicon nitride film
APPLIED MATERIALS INC135 citations98
US6833161B2Dec 21, 2004
Cyclical deposition of tungsten nitride for metal oxide gate electrode
APPLIED MATERIALS INC143 citations98
US6524952B1Feb 25, 2003
Method of forming a titanium silicide layer on a substrate
APPLIED MATERIALS INC170 citations97
US7745329B2Jun 29, 2010
Tungsten nitride atomic layer deposition processes
APPLIED MATERIALS INC36 citations95
US6214714B1Apr 10, 2001
Method of titanium/titanium nitride integration
APPLIED MATERIALS INC58 citations95
US7429516B2Sep 30, 2008
Tungsten nitride atomic layer deposition processes
APPLIED MATERIALS INC12 citations92
US7115499B2Oct 3, 2006
Cyclical deposition of tungsten nitride for metal oxide gate electrode
APPLIED MATERIALS INC28 citations92
US6555183B2Apr 29, 2003
Plasma treatment of a titanium nitride film formed by chemical vapor deposition
APPLIED MATERIALS INC36 citations92
US6410090B1Jun 25, 2002
Method and apparatus for forming insitu boron doped polycrystalline and amorphous silicon films
APPLIED MATERIALS INC27 citations92
US5863598AJan 26, 1999
Method of forming doped silicon in high aspect ratio openings
APPLIED MATERIALS INC36 citations92
US7078302B2Jul 18, 2006
Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal
APPLIED MATERIALS INC28 citations91
US6559039B2May 6, 2003
Doped silicon deposition process in resistively heated single wafer chamber
APPLIED MATERIALS INC23 citations90
US6582522B2Jun 24, 2003
Emissivity-change-free pumping plate kit in a single wafer chamber
APPLIED MATERIALS INC37 citations89
US6726955B1Apr 27, 2004
Method of controlling the crystal structure of polycrystalline silicon
APPLIED MATERIALS INC14 citations84
US6488776B2Dec 3, 2002
Method and apparatus for forming insitu boron doped polycrystalline and amorphous silicon films
APPLIED MATERIALS INC14 citations84
US6559074B1May 6, 2003
Method of forming a silicon nitride layer on a substrate
APPLIED MATERIALS INC19 citations83
US6548402B2Apr 15, 2003
Method of depositing a thick titanium nitride film
APPLIED MATERIALS INC16 citations82
US6991999B2Jan 31, 2006
Bi-layer silicon film and method of fabrication
APPLIED MATERIALS INC11 citations81
US7972663B2Jul 5, 2011
Method and apparatus for forming a high quality low temperature silicon nitride layer
APPLIED MATERIALS INC7 citations79
US6802906B2Oct 12, 2004
Emissivity-change-free pumping plate kit in a single wafer chamber
APPLIED MATERIALS INC11 citations73
US6365495B2Apr 2, 2002
Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature
APPLIED MATERIALS INC13 citations73
US6326690B2Dec 4, 2001
Method of titanium/titanium nitride integration
APPLIED MATERIALS INC9 citations73
US7335266B2Feb 26, 2008
Method of forming a controlled and uniform lightly phosphorous doped silicon film
APPLIED MATERIALS INC7 citations72
US6982214B2Jan 3, 2006
Method of forming a controlled and uniform lightly phosphorous doped silicon film
APPLIED MATERIALS INC7 citations72
US7365029B2Apr 29, 2008
Method for silicon nitride chemical vapor deposition
APPLIED MATERIALS INC6 citations62
US7611976B2Nov 3, 2009
Gate electrode dopant activation method for semiconductor manufacturing
APPLIED MATERIALS INC3 citations61
US7265036B2Sep 4, 2007
Deposition of nano-crystal silicon using a single wafer chamber
APPLIED MATERIALS INC0 citations47