Inventor
FU HAIYING
US36 patents
⚠️ This page may combine multiple inventors who share the name “FU HAIYING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NOVELLUS SYSTEMS INC
28 patentsUS7208389B1Apr 24, 2007
Method of porogen removal from porous low-k films using UV radiation
NOVELLUS SYSTEMS INC602 citations98
US7253125B1Aug 7, 2007
Method to improve mechanical strength of low-k dielectric film using modulated UV exposure
NOVELLUS SYSTEMS INC82 citations97
US7094713B1Aug 22, 2006
Methods for improving the cracking resistance of low-k dielectric materials
NOVELLUS SYSTEMS INC74 citations97
US7241704B1Jul 10, 2007
Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups
NOVELLUS SYSTEMS INC58 citations96
US7611757B1Nov 3, 2009
Method to improve mechanical strength of low-K dielectric film using modulated UV exposure
NOVELLUS SYSTEMS INC39 citations95
US7282438B1Oct 16, 2007
Low-k SiC copper diffusion barrier films
NOVELLUS SYSTEMS INC53 citations95
US6855645B2Feb 15, 2005
Silicon carbide having low dielectric constant
NOVELLUS SYSTEMS INC61 citations95
US9523155B2Dec 20, 2016
Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
NOVELLUS SYSTEMS INC15 citations92
US8043667B1Oct 25, 2011
Method to improve mechanical strength of low-K dielectric film using modulated UV exposure
NOVELLUS SYSTEMS INC18 citations92
US7968436B1Jun 28, 2011
Low-K SiC copper diffusion barrier films
NOVELLUS SYSTEMS INC15 citations92
US7923385B2Apr 12, 2011
Methods for producing low stress porous and CDO low-K dielectric materials using precursors with organic functional groups
NOVELLUS SYSTEMS INC17 citations92
US7906817B1Mar 15, 2011
High compressive stress carbon liners for MOS devices
NOVELLUS SYSTEMS INC40 citations92
US7573061B1Aug 11, 2009
Low-k SiC copper diffusion barrier films
NOVELLUS SYSTEMS INC24 citations92
US7473653B1Jan 6, 2009
Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups
NOVELLUS SYSTEMS INC12 citations92
US7390537B1Jun 24, 2008
Methods for producing low-k CDO films with low residual stress
NOVELLUS SYSTEMS INC51 citations92
US7381662B1Jun 3, 2008
Methods for improving the cracking resistance of low-k dielectric materials
NOVELLUS SYSTEMS INC32 citations92
US7341761B1Mar 11, 2008
Methods for producing low-k CDO films
NOVELLUS SYSTEMS INC17 citations92
US6764952B1Jul 20, 2004
Systems and methods to retard copper diffusion and improve film adhesion for a dielectric barrier on copper
NOVELLUS SYSTEMS INC28 citations92
US7326444B1Feb 5, 2008
Methods for improving integration performance of low stress CDO films
NOVELLUS SYSTEMS INC30 citations89
US6777349B2Aug 17, 2004
Hermetic silicon carbide
NOVELLUS SYSTEMS INC28 citations87
US8362571B1Jan 29, 2013
High compressive stress carbon liners for MOS devices
NOVELLUS SYSTEMS INC5 citations84
US9834852B2Dec 5, 2017
Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
NOVELLUS SYSTEMS INC13 citations83
US9746427B2Aug 29, 2017
Detection of plating on wafer holding apparatus
NOVELLUS SYSTEMS INC9 citations83
US7781351B1Aug 24, 2010
Methods for producing low-k carbon doped oxide films with low residual stress
NOVELLUS SYSTEMS INC14 citations83
US7737525B1Jun 15, 2010
Method for producing low-K CDO films
NOVELLUS SYSTEMS INC9 citations83
US7799705B1Sep 21, 2010
Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups
NOVELLUS SYSTEMS INC5 citations74
US10662545B2May 26, 2020
Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
NOVELLUS SYSTEMS INC4 citations72
US9816196B2Nov 14, 2017
Method and apparatus for electroplating semiconductor wafer when controlling cations in electrolyte
NOVELLUS SYSTEMS INC1 citations48