Inventor
NEYER THOMAS
DE17 patents
⚠️ This page may combine multiple inventors who share the name “NEYER THOMAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEMICONDUCTOR COMPONENTS IND LLC
16 patentsUS10388526B1Aug 20, 2019
Semiconductor wafer thinning systems and related methods
SEMICONDUCTOR COMPONENTS IND LLC18 citations93
US11481532B2Oct 25, 2022
Systems and methods for designing a discrete device product
SEMICONDUCTOR COMPONENTS IND LLC5 citations79
US10665458B2May 26, 2020
Semiconductor wafer thinning systems and related methods
SEMICONDUCTOR COMPONENTS IND LLC1 citations72
US11373859B2Jun 28, 2022
Semiconductor substrate singulation systems and related methods
SEMICONDUCTOR COMPONENTS IND LLC4 citations71
US10896815B2Jan 19, 2021
Semiconductor substrate singulation systems and related methods
SEMICONDUCTOR COMPONENTS IND LLC4 citations71
US10950596B2Mar 16, 2021
Diode with current sensor
SEMICONDUCTOR COMPONENTS IND LLC2 citations68
US11880642B2Jan 23, 2024
Systems and methods for designing a discrete device product
SEMICONDUCTOR COMPONENTS IND LLC1 citations67
US11152211B2Oct 19, 2021
Semiconductor wafer thinning systems and related methods
SEMICONDUCTOR COMPONENTS IND LLC0 citations62
US12501649B2Dec 16, 2025
Power device with graded channel
SEMICONDUCTOR COMPONENTS IND LLC0 citations58
US11605732B2Mar 14, 2023
Power device with graded channel
SEMICONDUCTOR COMPONENTS IND LLC0 citations58
US12125884B2Oct 22, 2024
MOSFET device with undulating channel
SEMICONDUCTOR COMPONENTS IND LLC0 citations56
US11658214B2May 23, 2023
MOSFET device with undulating channel
SEMICONDUCTOR COMPONENTS IND LLC0 citations56
US11398437B2Jul 26, 2022
Power device including metal layer
SEMICONDUCTOR COMPONENTS IND LLC1 citations56
US11652027B2May 16, 2023
Vertical transistors with gate connection grid
SEMICONDUCTOR COMPONENTS IND LLC0 citations48
US11817478B2Nov 14, 2023
Termination structures with reduced dynamic output capacitance loss
SEMICONDUCTOR COMPONENTS IND LLC0 citations47
US10629686B2Apr 21, 2020
Carbon-controlled ohmic contact layer for backside ohmic contact on a silicon carbide power semiconductor device
SEMICONDUCTOR COMPONENTS IND LLC0 citations45