Inventor
YANG GWO-SHII
TW20 patents
⚠️ This page may combine multiple inventors who share the name “YANG GWO-SHII”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
18 patentsUS6306722B1Oct 23, 2001
Method for fabricating shallow trench isolation structure
UNITED MICROELECTRONICS CORP53 citations96
US5956598ASep 21, 1999
Method for fabricating a shallow-trench isolation structure with a rounded corner in integrated circuit
UNITED MICROELECTRONICS CORP63 citations96
US6559004B1May 6, 2003
Method for forming three dimensional semiconductor structure and three dimensional capacitor
UNITED MICROELECTRONICS CORP51 citations92
US6475865B1Nov 5, 2002
Method of fabricating semiconductor device
UNITED MICROELECTRONICS CORP36 citations92
US6254676B1Jul 3, 2001
Method for manufacturing metal oxide semiconductor transistor having raised source/drain
UNITED MICROELECTRONICS CORP28 citations92
US6251783B1Jun 26, 2001
Method of manufacturing shallow trench isolation
UNITED MICROELECTRONICS CORP20 citations92
US6146974ANov 14, 2000
Method of fabricating shallow trench isolation (STI)
UNITED MICROELECTRONICS CORP32 citations92
US6238989B1May 29, 2001
Process of forming self-aligned silicide on source/drain region
UNITED MICROELECTRONICS CORP40 citations87
US6316330B1Nov 13, 2001
Method of fabricating a shallow trench isolation semiconductor device
UNITED MICROELECTRONICS CORP7 citations74
US6248644B1Jun 19, 2001
Method of fabricating shallow trench isolation structure
UNITED MICROELECTRONICS CORP10 citations74
US6228742B1May 8, 2001
Method of fabricating shallow trench isolation structure
UNITED MICROELECTRONICS CORP10 citations74
US6180492B1Jan 30, 2001
Method of forming a liner for shallow trench isolation
UNITED MICROELECTRONICS CORP12 citations74
US6087262AJul 11, 2000
Method for manufacturing shallow trench isolation structure
UNITED MICROELECTRONICS CORP11 citations74
US6583489B2Jun 24, 2003
Method for forming interconnect structure with low dielectric constant
UNITED MICROELECTRONICS CORP10 citations73
US6200904B1Mar 13, 2001
Method of forming a contact hole of a DRAM
UNITED MICROELECTRONICS CORP12 citations72
US6249138B1Jun 19, 2001
Method for testing leakage current caused self-aligned silicide
UNITED MICROELECTRONICS CORP13 citations71
US6281143B1Aug 28, 2001
Method of forming borderless contact
UNITED MICROELECTRONICS CORP6 citations62
US6218243B1Apr 17, 2001
Method of fabricating a DRAM capacitor
UNITED MICROELECTRONICS CORP2 citations61