P

Inventor

CHO MIN HEE

KR86 patents
⚠️ This page may combine multiple inventors who share the name “CHO MIN HEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

40 patents
US7613148B2Nov 3, 2009

Method and apparatus for performing fast handover through fast ranging in a broadband wireless communication system

SAMSUNG ELECTRONICS CO LTD54 citations97
US9853031B1Dec 26, 2017

Semiconductor device

SAMSUNG ELECTRONICS CO LTD24 citations93
US7706804B2Apr 27, 2010

Apparatus and method for allocating resources in a communication system

SAMSUNG ELECTRONICS CO LTD30 citations93
US7470588B2Dec 30, 2008

Transistors including laterally extended active regions and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD44 citations93
US7307973B2Dec 11, 2007

System and method for ranging for a fast handover in a mobile communication system

SAMSUNG ELECTRONICS CO LTD19 citations92
US11195836B2Dec 7, 2021

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD8 citations84
US10615164B2Apr 7, 2020

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD8 citations84
US9437697B2Sep 6, 2016

Semiconductor device having buried gate structure and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US7936717B2May 3, 2011

Apparatus and method for performing initial network entry in broadband wireless communication system

SAMSUNG ELECTRONICS CO LTD11 citations84
US7894394B2Feb 22, 2011

Resource allocation method and apparatus in multi-channel system

SAMSUNG ELECTRONICS CO LTD7 citations84
US7432143B2Oct 7, 2008

Method for forming gate of semiconductor device

SAMSUNG ELECTRONICS CO LTD9 citations84
US7153745B2Dec 26, 2006

Recessed gate transistor structure and method of forming the same

SAMSUNG ELECTRONICS CO LTD11 citations84
US10199379B2Feb 5, 2019

Semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations83
US7924756B2Apr 12, 2011

Method for controlling sleep-mode operation in a communication system

SAMSUNG ELECTRONICS CO LTD14 citations83
US7902597B2Mar 8, 2011

Transistors with laterally extended active regions and methods of fabricating same

SAMSUNG ELECTRONICS CO LTD13 citations83
US7526288B2Apr 28, 2009

System and method for controlling operation states of a medium access control layer in a broadband wireless access communication system

SAMSUNG ELECTRONICS CO LTD16 citations83
US10361205B2Jul 23, 2019

Semiconductor devices including structures for reduced leakage current and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD5 citations82
US11563005B2Jan 24, 2023

Three-dimensional semiconductor device with a bit line perpendicular to a substrate

SAMSUNG ELECTRONICS CO LTD4 citations74
US7666742B2Feb 23, 2010

Method of fabricating semiconductor devices having a recessed active edge

SAMSUNG ELECTRONICS CO LTD7 citations74
US7169681B2Jan 30, 2007

Method of forming dual gate dielectric layer

SAMSUNG ELECTRONICS CO LTD9 citations74
US11696434B2Jul 4, 2023

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD2 citations73
US11417772B2Aug 16, 2022

Semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations73
US10249628B2Apr 2, 2019

Semiconductor device having buried gate structure and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations73
US9425297B2Aug 23, 2016

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD3 citations73
US9390784B2Jul 12, 2016

Semiconductor memory device and semiconductor package

SAMSUNG ELECTRONICS CO LTD6 citations73
US11018137B2May 25, 2021

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD4 citations72
US10770463B2Sep 8, 2020

Semiconductor devices including structures for reduced leakage current and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations71
US10644003B2May 5, 2020

Semiconductor memory devices having bit line node contact between bit line and active region

SAMSUNG ELECTRONICS CO LTD4 citations71
US10896951B2Jan 19, 2021

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD4 citations70
US10811408B2Oct 20, 2020

Semiconductor device including a gate insulation pattern and a gate electrode pattern

SAMSUNG ELECTRONICS CO LTD3 citations68
US7936716B2May 3, 2011

Resource allocating apparatus and method for simplex communication in wideband wireless communication system

SAMSUNG ELECTRONICS CO LTD5 citations63
US7473619B2Jan 6, 2009

Method of fabricating semiconductor device having alignment key and semiconductor device fabricated thereby

SAMSUNG ELECTRONICS CO LTD4 citations63
US6969658B2Nov 29, 2005

Methods providing oxide layers having reduced thicknesses at central portions thereof

SAMSUNG ELECTRONICS CO LTD3 citations63
US12419049B2Sep 16, 2025

Semiconductor memory device including symmetrical channel patterns and wordlines

SAMSUNG ELECTRONICS CO LTD0 citations62
US12034047B2Jul 9, 2024

Semiconductor device including oxide semiconductor layer

SAMSUNG ELECTRONICS CO LTD0 citations62
US11903184B2Feb 13, 2024

Semiconductor memory devices and methods for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11785761B2Oct 10, 2023

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US11532707B2Dec 20, 2022

Semiconductor device including oxide semiconductor layer

SAMSUNG ELECTRONICS CO LTD0 citations62
US11342330B2May 24, 2022

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US10991699B2Apr 27, 2021

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD0 citations62

KIM NAM-GI

4 patents

KOREA ELECTRONICS TELECOMM

1 patent

HUH HOON

1 patent

CHO MIN-HEE

1 patent

HYUNDAI MOTOR CO LTD

1 patent

SEMES CO LTD

1 patent

CHO JAE-HEE

1 patent

Showing the top 50 of 86 patents by PatentIndex Score.