P

Inventor

HWANG YOOSANG

KR105 patents
⚠️ This page may combine multiple inventors who share the name “HWANG YOOSANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

45 patents
US10784272B2Sep 22, 2020

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD25 citations94
US10535659B2Jan 14, 2020

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD25 citations94
US10490444B2Nov 26, 2019

Semiconductor devices having an air gap

SAMSUNG ELECTRONICS CO LTD12 citations92
US10468350B2Nov 5, 2019

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD12 citations92
US10468414B2Nov 5, 2019

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD17 citations86
US11723191B2Aug 8, 2023

Semiconductor memory devices having protruding contact portions

SAMSUNG ELECTRONICS CO LTD8 citations85
US11665883B2May 30, 2023

Semiconductor memory device having spacer capping pattern disposed between burried dielectic pattern and an air gap and method of fabricating same

SAMSUNG ELECTRONICS CO LTD10 citations84
US11195836B2Dec 7, 2021

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD8 citations84
US10978397B2Apr 13, 2021

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD5 citations84
US10861854B2Dec 8, 2020

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD9 citations84
US10615164B2Apr 7, 2020

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD8 citations84
US10410916B2Sep 10, 2019

Semiconductor device

SAMSUNG ELECTRONICS CO LTD7 citations84
US10373960B2Aug 6, 2019

Semiconductor memory devices including separate upper and lower bit line spacers

SAMSUNG ELECTRONICS CO LTD8 citations84
US10269808B2Apr 23, 2019

Semiconductor devices and methods of forming semiconductor devices

SAMSUNG ELECTRONICS CO LTD4 citations84
US9871093B2Jan 16, 2018

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD8 citations84
US9508649B2Nov 29, 2016

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD7 citations84
US10395706B2Aug 27, 2019

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD5 citations83
US9847278B2Dec 19, 2017

Semiconductor devices having air spacers and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD12 citations83
US10461153B2Oct 29, 2019

Semiconductor memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD11 citations82
US10211091B2Feb 19, 2019

Semiconductor devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD6 citations82
US9184136B2Nov 10, 2015

Semiconductor devices and methods for fabricating the same

SAMSUNG ELECTRONICS CO LTD11 citations82
US11844212B2Dec 12, 2023

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD1 citations73
US11616065B2Mar 28, 2023

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD2 citations73
US11355509B2Jun 7, 2022

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD2 citations73
US11133315B2Sep 28, 2021

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations73
US11101283B2Aug 24, 2021

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD2 citations73
US11088148B2Aug 10, 2021

Semiconductor memory devices including separate upper and lower bit line spacers

SAMSUNG ELECTRONICS CO LTD1 citations73
US10559571B2Feb 11, 2020

Methods of fabricating semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD4 citations73
US10535605B2Jan 14, 2020

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD3 citations73
US10037996B2Jul 31, 2018

Semiconductor device includes a substrate having conductive contact structures thereon

SAMSUNG ELECTRONICS CO LTD4 citations73
US9960170B1May 1, 2018

Methods of fabricating memory devices

SAMSUNG ELECTRONICS CO LTD6 citations73
US9935111B2Apr 3, 2018

Method of forming semiconductor device including edge chip and related device

SAMSUNG ELECTRONICS CO LTD4 citations73
US9929013B2Mar 27, 2018

Methods of fabricating a semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations73
US9831172B2Nov 28, 2017

Semiconductor devices having expanded recess for bit line contact

SAMSUNG ELECTRONICS CO LTD5 citations73
US9761591B2Sep 12, 2017

Method of forming semiconductor device including edge chip and related device

SAMSUNG ELECTRONICS CO LTD5 citations73
US9087728B2Jul 21, 2015

Semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations73
US11764107B2Sep 19, 2023

Methods of manufacturing semiconductor devices

SAMSUNG ELECTRONICS CO LTD2 citations72
US11410951B2Aug 9, 2022

Three-dimensional semiconductor memory device

SAMSUNG ELECTRONICS CO LTD6 citations72
US11282787B2Mar 22, 2022

Semiconductor devices having improved electrical characteristics and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations72
US11100958B2Aug 24, 2021

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD2 citations72
US10910378B2Feb 2, 2021

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD5 citations72
US10910261B2Feb 2, 2021

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US10714565B2Jul 14, 2020

Semiconductor device with support pattern

SAMSUNG ELECTRONICS CO LTD2 citations72
US10410722B2Sep 10, 2019

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD2 citations72
US10121793B2Nov 6, 2018

Semiconductor device having supporters and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations72

KIM DAEIK

2 patents

SHARP KK

1 patent

KIM BONGSOO

1 patent

CHOI BYOUNGDEOG

1 patent

Showing the top 50 of 105 patents by PatentIndex Score.