Inventor
HWANG YOOSANG
KR105 patents
⚠️ This page may combine multiple inventors who share the name “HWANG YOOSANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
45 patentsUS10784272B2Sep 22, 2020
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD25 citations94
US10535659B2Jan 14, 2020
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD25 citations94
US10490444B2Nov 26, 2019
Semiconductor devices having an air gap
SAMSUNG ELECTRONICS CO LTD12 citations92
US10468350B2Nov 5, 2019
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD12 citations92
US10468414B2Nov 5, 2019
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD17 citations86
US11723191B2Aug 8, 2023
Semiconductor memory devices having protruding contact portions
SAMSUNG ELECTRONICS CO LTD8 citations85
US11665883B2May 30, 2023
Semiconductor memory device having spacer capping pattern disposed between burried dielectic pattern and an air gap and method of fabricating same
SAMSUNG ELECTRONICS CO LTD10 citations84
US11195836B2Dec 7, 2021
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD8 citations84
US10978397B2Apr 13, 2021
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD5 citations84
US10861854B2Dec 8, 2020
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD9 citations84
US10615164B2Apr 7, 2020
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD8 citations84
US10410916B2Sep 10, 2019
Semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations84
US10373960B2Aug 6, 2019
Semiconductor memory devices including separate upper and lower bit line spacers
SAMSUNG ELECTRONICS CO LTD8 citations84
US10269808B2Apr 23, 2019
Semiconductor devices and methods of forming semiconductor devices
SAMSUNG ELECTRONICS CO LTD4 citations84
US9871093B2Jan 16, 2018
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD8 citations84
US9508649B2Nov 29, 2016
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD7 citations84
US10395706B2Aug 27, 2019
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD5 citations83
US9847278B2Dec 19, 2017
Semiconductor devices having air spacers and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD12 citations83
US10461153B2Oct 29, 2019
Semiconductor memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD11 citations82
US10211091B2Feb 19, 2019
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD6 citations82
US9184136B2Nov 10, 2015
Semiconductor devices and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations82
US11844212B2Dec 12, 2023
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD1 citations73
US11616065B2Mar 28, 2023
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD2 citations73
US11355509B2Jun 7, 2022
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD2 citations73
US11133315B2Sep 28, 2021
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US11101283B2Aug 24, 2021
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations73
US11088148B2Aug 10, 2021
Semiconductor memory devices including separate upper and lower bit line spacers
SAMSUNG ELECTRONICS CO LTD1 citations73
US10559571B2Feb 11, 2020
Methods of fabricating semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD4 citations73
US10535605B2Jan 14, 2020
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD3 citations73
US10037996B2Jul 31, 2018
Semiconductor device includes a substrate having conductive contact structures thereon
SAMSUNG ELECTRONICS CO LTD4 citations73
US9960170B1May 1, 2018
Methods of fabricating memory devices
SAMSUNG ELECTRONICS CO LTD6 citations73
US9935111B2Apr 3, 2018
Method of forming semiconductor device including edge chip and related device
SAMSUNG ELECTRONICS CO LTD4 citations73
US9929013B2Mar 27, 2018
Methods of fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations73
US9831172B2Nov 28, 2017
Semiconductor devices having expanded recess for bit line contact
SAMSUNG ELECTRONICS CO LTD5 citations73
US9761591B2Sep 12, 2017
Method of forming semiconductor device including edge chip and related device
SAMSUNG ELECTRONICS CO LTD5 citations73
US9087728B2Jul 21, 2015
Semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations73
US11764107B2Sep 19, 2023
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD2 citations72
US11410951B2Aug 9, 2022
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD6 citations72
US11282787B2Mar 22, 2022
Semiconductor devices having improved electrical characteristics and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US11100958B2Aug 24, 2021
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US10910378B2Feb 2, 2021
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD5 citations72
US10910261B2Feb 2, 2021
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10714565B2Jul 14, 2020
Semiconductor device with support pattern
SAMSUNG ELECTRONICS CO LTD2 citations72
US10410722B2Sep 10, 2019
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD2 citations72
US10121793B2Nov 6, 2018
Semiconductor device having supporters and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations72
KIM DAEIK
2 patentsSHARP KK
1 patentKIM BONGSOO
1 patentCHOI BYOUNGDEOG
1 patentShowing the top 50 of 105 patents by PatentIndex Score.