Inventor

FITZ CLEMENS

DE18 patents

⚠️ This page may combine multiple inventors who share the name “FITZ CLEMENS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FITZ CLEMENS

QIMONDA AG

Integrated circuit with a contact structure including a portion arranged in a cavity of a semiconductor structure

Buried bitline with reduced resistance

Method of removing refractory metal layers and of siliciding contact areas

INTERMOLECULAR INC

Aqua regia and hydrogen peroxide HCL combination to remove Ni and NiPt residues

Aqua regia and hydrogen peroxide HCI combination to remove Ni and NiPt residues

Aqua regia and hydrogen peroxide HCl combination to remove Ni and NiPt residues

DUONG ANH

Aqua regia and hydrogen peroxide HCl combination to remove Ni and NiPt residues

Process to remove Ni and Pt residues for NiPtSi applications

GLOBALFOUNDRIES INC

Gate silicidation

Gate silicidation

FITZ CLEMENS

Methods of forming metal silicide regions on semiconductor devices

HNO3 single wafer clean process to strip nickel and for MOL post etch

COMMISSARIAT ENERGIE ATOMIQUE

Method of manufacturing microelectronic components

BAARS PETER

Methods for fabricating a CMOS integrated circuit having a dual stress layer (DSL)

SCHEIPER THILO

Methods of forming metal silicide regions on semiconductor devices using different temperatures

FLACHOWSKY STEFAN

Stabilized metal silicides in silicon-germanium regions of transistor elements

KUMARASAMY SIVAKUMAR

NiSi rework procedure to remove platinum residuals

RINDERKNECHT JOCHEN

Method and apparatus for characterizing discontinuities in semiconductor devices