Inventor
WANN HSING-JEN
US15 patents
⚠️ This page may combine multiple inventors who share the name “WANN HSING-JEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
8 patentsUS6429091B1Aug 6, 2002
Patterned buried insulator
IBM55 citations96
US6936522B2Aug 30, 2005
Selective silicon-on-insulator isolation structure and method
IBM37 citations92
US6297127B1Oct 2, 2001
Self-aligned deep trench isolation to shallow trench isolation
IBM40 citations92
US6057724AMay 2, 2000
Method and apparatus for synchronized clock distribution
IBM24 citations92
US7326983B2Feb 5, 2008
Selective silicon-on-insulator isolation structure and method
IBM8 citations73
US7081393B2Jul 25, 2006
Reduced dielectric constant spacer materials integration for high speed logic gates
IBM8 citations73
US7923786B2Apr 12, 2011
Selective silicon-on-insulator isolation structure and method
IBM3 citations62
US6653686B2Nov 25, 2003
Structure and method of controlling short-channel effect of very short channel MOSFET
IBM6 citations62
UNIV CALIFORNIA
7 patentsUS5780899AJul 14, 1998
Delta doped and counter doped dynamic threshold voltage MOSFET for ultra-low voltage operation
UNIV CALIFORNIA197 citations99
US5448513ASep 5, 1995
Capacitorless DRAM device on silicon-on-insulator substrate
UNIV CALIFORNIA361 citations99
US6300649B1Oct 9, 2001
Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility
UNIV CALIFORNIA154 citations97
US6121077ASep 19, 2000
Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility
UNIV CALIFORNIA167 citations97
US5982003ANov 9, 1999
Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility
UNIV CALIFORNIA162 citations97
US5489792AFeb 6, 1996
Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility
UNIV CALIFORNIA369 citations96
US5599728AFeb 4, 1997
Method of fabricating a self-aligned high speed MOSFET device
UNIV CALIFORNIA41 citations92