Inventor · disambiguated record
Mantu K. Hudait
Also filed as: HUDAIT MANTU · HUDAIT MANTU K
59 granted patents·6 pending applications·456 citations·filing 2005–2017
99Inventor score
Top patents by PatentIndex Score
65 records- 0196US7947971B2Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drainsINTEL CORP·Filed 2010·Granted May 24, 2011·24 cites·10 claims
- 0296US7429747B2Sb-based CMOS devicesINTEL CORP·Filed 2006·Granted Sep 30, 2008·39 cites·26 claims
- 0395US7759142B1Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drainsINTEL CORP·Filed 2008·Granted Jul 20, 2010·29 cites·17 claims
- 0495US7573059B2Dislocation-free InSb quantum well structure on Si using novel buffer architectureINTEL CORP·Filed 2006·Granted Aug 11, 2009·41 cites·17 claims
- 0594US10084058B2Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drainsINTEL CORP·Filed 2016·Granted Sep 25, 2018·7 cites·14 claims
- 0694US8258498B2Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drainsMAJHI PRASHANT·Filed 2011·Granted Sep 4, 2012·15 cites·17 claims
- 0794US7670894B2Selective high-k dielectric film deposition for semiconductor deviceINTEL CORP·Filed 2008·Granted Mar 2, 2010·20 cites·22 claims
- 0894US7601980B2Dopant confinement in the delta doped layer using a dopant segregation barrier in quantum well structuresINTEL CORP·Filed 2006·Granted Oct 13, 2009·24 cites·18 claims
- 0993US7592213B2Tensile strained NMOS transistor using group III-N source/drain regionsINTEL CORP·Filed 2005·Granted Sep 22, 2009·22 cites·11 claims
- 1092US8633471B2Apparatus and methods for forming a modulation doped non-planar transistorPILLARISETTY RAVI·Filed 2011·Granted Jan 21, 2014·9 cites·18 claims
- 1192US7915642B2Apparatus and methods for forming a modulation doped non-planar transistorINTEL CORP·Filed 2008·Granted Mar 29, 2011·14 cites·7 claims
- 1292US7494911B2Buffer layers for device isolation of devices grown on siliconINTEL CORP·Filed 2006·Granted Feb 24, 2009·19 cites·15 claims
- 1391US8809836B2Techniques for forming contacts to quantum well transistorsPILLARISETTY RAVI·Filed 2013·Granted Aug 19, 2014·8 cites·8 claims
- 1490US7851780B2Semiconductor buffer architecture for III-V devices on silicon substratesINTEL CORP·Filed 2006·Granted Dec 14, 2010·14 cites·12 claims
- 1590US7566898B2Buffer architecture formed on a semiconductor waferINTEL CORP·Filed 2007·Granted Jul 28, 2009·17 cites·14 claims
- 1689US8501508B2Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drainsMAJHI PRASHANT·Filed 2012·Granted Aug 6, 2013·7 cites·25 claims
- 1789US8143646B2Stacking fault and twin blocking barrier for integrating III-V on SiHUDAIT MANTU K·Filed 2006·Granted Mar 27, 2012·14 cites·16 claims
- 1888US9691856B2Extreme high mobility CMOS logicINTEL CORP·Filed 2015·Granted Jun 27, 2017·3 cites·18 claims
- 1988US8120065B2Tensile strained NMOS transistor using group III-N source/drain regionsDATTA SUMAN·Filed 2009·Granted Feb 21, 2012·12 cites·17 claims
- 2088US8115235B2Modulation-doped halo in quantum well field-effect transistors, apparatus made therewith, and methods of using samePILLARISETTY RAVI·Filed 2009·Granted Feb 14, 2012·15 cites·12 claims
- 2187US7892902B1Group III-V devices with multiple spacer layersINTEL CORP·Filed 2009·Granted Feb 22, 2011·13 cites·20 claims
- 2286US8183556B2Extreme high mobility CMOS logicDATT DOT OVER A SUMAN·Filed 2005·Granted May 22, 2012·12 cites·36 claims
- 2385US8617945B2Stacking fault and twin blocking barrier for integrating III-V on SiHUDAIT MANTU K·Filed 2012·Granted Dec 31, 2013·6 cites·10 claims
- 2485US8518768B2Extreme high mobility CMOS logicDATTA SUMAN·Filed 2012·Granted Aug 27, 2013·4 cites·7 claims
- 2585US8368052B2Techniques for forming contacts to quantum well transistorsINTEL CORP·Filed 2009·Granted Feb 5, 2013·7 cites·22 claims
- 2684US8217383B2High hole mobility p-channel Ge transistor structure on Si substrateHUDAIT MANTU K·Filed 2010·Granted Jul 10, 2012·5 cites·20 claims
- 2783US9564490B2Apparatus and methods for forming a modulation doped non-planar transistorINTEL CORP·Filed 2015·Granted Feb 7, 2017·2 cites·18 claims
- 2883US7687799B2Methods of forming buffer layer architecture on silicon and structures formed therebyINTEL CORP·Filed 2008·Granted Mar 30, 2010·8 cites·20 claims
- 2979US7868318B2Quantum well field-effect transistors with composite spacer structures, apparatus made therewith, and methods of using sameINTEL CORP·Filed 2008·Granted Jan 11, 2011·7 cites·18 claims
- 3077US8124959B2High hole mobility semiconductor deviceHUDAIT MANTU K·Filed 2007·Granted Feb 28, 2012·5 cites·12 claims
- 3177US7791063B2High hole mobility p-channel Ge transistor structure on Si substrateINTEL CORP·Filed 2007·Granted Sep 7, 2010·4 cites·14 claims
- 3276US9006707B2Forming arsenide-based complementary logic on a single substrateHUDAIT MANTU K·Filed 2007·Granted Apr 14, 2015·4 cites·20 claims
- 3376US8120063B2Modulation-doped multi-gate devicesHUDAIT MANTU K·Filed 2008·Granted Feb 21, 2012·5 cites·16 claims
- 3474US8525151B2Apparatus and methods for improving parallel conduction in a quantum well devicePILLARISETTY RAVI·Filed 2012·Granted Sep 3, 2013·2 cites·18 claims
- 3574US8242001B2Apparatus and methods for improving parallel conduction in a quantum well devicePILLARISETTY RAVI·Filed 2011·Granted Aug 14, 2012·2 cites·6 claims
- 3672US9548363B2Extreme high mobility CMOS logicINTEL CORP·Filed 2014·Granted Jan 17, 2017·1 cites·7 claims
- 3771US8802517B2Extreme high mobility CMOS logicDATTA SUMAN·Filed 2013·Granted Aug 12, 2014·1 cites·12 claims
- 3871US8017933B2Compositionally-graded quantum-well channels for semiconductor devicesINTEL CORP·Filed 2008·Granted Sep 13, 2011·4 cites·15 claims
- 3970US7863710B2Dislocation removal from a group III-V film grown on a semiconductor substrateINTEL CORP·Filed 2008·Granted Jan 4, 2011·3 cites·10 claims
- 4067US8129749B2Double quantum well structures for transistorsPILLARISETTY RAVI·Filed 2008·Granted Mar 6, 2012·3 cites·10 claims
- 4163US8093584B2Self-aligned replacement metal gate process for QWFET devicesRADOSAVLJEVIC MARKO·Filed 2008·Granted Jan 10, 2012·2 cites·18 claims
- 4263US8012816B2Double pass formation of a deep quantum well in enhancement mode III-V devicesINTEL CORP·Filed 2008·Granted Sep 6, 2011·2 cites·11 claims
- 4362US10141437B2Extreme high mobility CMOS logicINTEL CORP·Filed 2017·Granted Nov 27, 2018·0 cites·18 claims
- 4462US7879739B2Thin transition layer between a group III-V substrate and a high-k gate dielectric layerINTEL CORP·Filed 2006·Granted Feb 1, 2011·1 cites·7 claims
- 4560US10177249B2Techniques for forming contacts to quantum well transistorsINTEL CORP·Filed 2017·Granted Jan 8, 2019·0 cites·23 claims
- 4659US10263079B2Apparatus and methods for forming a modulation doped non-planar transistorINTEL CORP·Filed 2016·Granted Apr 16, 2019·0 cites·16 claims
- 4759US8106440B2Selective high-k dielectric film deposition for semiconductor deviceRACHMADY WILLY·Filed 2009·Granted Jan 31, 2012·0 cites·8 claims
- 4858US9704981B2Techniques for forming contacts to quantum well transistorsINTEL CORP·Filed 2016·Granted Jul 11, 2017·0 cites·16 claims
- 4958US9356099B2Techniques for forming contacts to quantum well transistorsPILLARISETTY RAVI·Filed 2014·Granted May 31, 2016·0 cites·15 claims
- 5058US7790536B2Dopant confinement in the delta doped layer using a dopant segregration barrier in quantum well structuresINTEL CORP·Filed 2009·Granted Sep 7, 2010·0 cites·8 claims
Showing the top 50 of 65 patent records by PatentIndex Score.
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