Inventor · disambiguated record
Zhaoxia Bi
Also filed as: BI ZHAOXIA
8 granted patents·2 pending applications·131 citations·filing 2008–2024
86Inventor score
Technology areasH10P
Top patents by PatentIndex Score
10 records- 0196US7829443B2Nitride nanowires and method of producing suchQUNANO AB·Filed 2008·Granted Nov 9, 2010·89 cites·27 claims
- 0293US8309439B2Nitride nanowires and method of producing suchSEIFERT WERNER·Filed 2010·Granted Nov 13, 2012·31 cites·23 claims
- 0388US8664094B2Method of producing nitride nanowires with different core and shell V/III flow ratiosQUNANO AB·Filed 2012·Granted Mar 4, 2014·6 cites·13 claims
- 0485US9024338B2Device with nitride nanowires having a shell layer and a continuous layerQUNANO AB·Filed 2013·Granted May 5, 2015·4 cites·10 claims
- 0575US2025176316A1Semiconductor template and fabrication methodHEXAGEM AB·Filed 2024·Application pending·0 cites
- 0669US11342477B2III-nitride semiconductor devicesHEXAGEM AB·Filed 2017·Granted May 24, 2022·1 cites·15 claims
- 0764US12218275B2Semiconductor template and fabrication methodHEXAGEM AB·Filed 2020·Granted Feb 4, 2025·0 cites·13 claims
- 0860US9947831B2Light emitting diode device having III-nitride nanowires, a shell layer and a continuous layerQUNANO AB·Filed 2017·Granted Apr 17, 2018·0 cites·13 claims
- 0956US9660136B2Nitride nanowires and method of producing suchQUNANO AB·Filed 2015·Granted May 23, 2017·0 cites·5 claims
- 1031US2021202236A1Forming a planar surface of a iii-nitride materialHEXAGEM AB·Filed 2017·Application pending·0 cites
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