Inventor
SAITOH YOSHIKAZU
JP26 patents
⚠️ This page may combine multiple inventors who share the name “SAITOH YOSHIKAZU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS TECH CORP
7 patentsUS7569881B2Aug 4, 2009
Semiconductor integrated circuit device with reduced leakage current
RENESAS TECH CORP9 citations92
US7388238B2Jun 17, 2008
Semiconductor integrated circuit device with reduced leakage current
RENESAS TECH CORP6 citations74
US6809578B2Oct 26, 2004
Stable voltage generating circuit
RENESAS TECH CORP7 citations74
US6803809B2Oct 12, 2004
Step-down circuit for generating a stable internal voltage
RENESAS TECH CORP10 citations74
US6724647B1Apr 20, 2004
Variable logical circuit, semiconductor integrated circuit, and method for manufacturing semiconductor integrated circuit
RENESAS TECH CORP6 citations74
US6711075B2Mar 23, 2004
Semiconductor wafer, semiconductor chip, and manufacturing method of semiconductor device
RENESAS TECH CORP9 citations73
US7436247B2Oct 14, 2008
Step-down circuit with stabilized output voltage
RENESAS TECH CORP3 citations63
HITACHI ULSI SYS CO LTD
5 patentsUS6998674B2Feb 14, 2006
Semiconductor integrated circuit device with reduced leakage current
HITACHI ULSI SYS CO LTD28 citations96
US6885057B2Apr 26, 2005
Semiconductor integrated circuit device with reduced leakage current
HITACHI ULSI SYS CO LTD12 citations92
US6885599B2Apr 26, 2005
Semiconductor wafer, semiconductor chip, and manufacturing method of semiconductor device
HITACHI ULSI SYS CO LTD13 citations84
US7087942B2Aug 8, 2006
Semiconductor integrated circuit device with reduced leakage current
HITACHI ULSI SYS CO LTD9 citations82
US7208999B2Apr 24, 2007
Step-down circuit with stabilized output voltage
HITACHI ULSI SYS CO LTD2 citations63
RENESAS ELECTRONICS CORP
4 patentsUS7964484B2Jun 21, 2011
Semiconductor integrated circuit device with reduced leakage current
RENESAS ELECTRONICS CORP14 citations92
US8797791B2Aug 5, 2014
Semiconductor integrated circuit device with reduced leakage current
RENESAS ELECTRONICS CORP7 citations84
US9530485B2Dec 27, 2016
Semiconductor integrated circuit device with reduced leakage current
RENESAS ELECTRONICS CORP1 citations63
US9111636B2Aug 18, 2015
Semiconductor integrated circuit device with reduced leakage current
RENESAS ELECTRONICS CORP2 citations63
HITACHI DEVICE ENG
3 patentsOSADA KENICHI
3 patentsUS8437179B2May 7, 2013
Semiconductor integrated circuit device with reduced leakage current
OSADA KENICHI3 citations73
US8232589B2Jul 31, 2012
Semiconductor integrated circuit device with reduced leakage current
OSADA KENICHI1 citations62
US8125017B2Feb 28, 2012
Semiconductor integrated circuit device with reduced leakage current
OSADA KENICHI1 citations62
HITACHI LTD
2 patentsMITSUBISHI RAYON CO
2 patentsUS7115751B2Oct 3, 2006
Method for producing trimer of indole derivative, and trimer of indole derivative and laminated structure thereof
MITSUBISHI RAYON CO6 citations73
US7585981B2Sep 8, 2009
Method for producing trimer of indole derivative, and trimer of indole derivative and laminated structure thereof
MITSUBISHI RAYON CO0 citations51