Inventor

CHEN FUSEN

US52 patents

⚠️ This page may combine multiple inventors who share the name “CHEN FUSEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHEN FUSEN

APPLIED MATERIALS INC

Methods and apparatus for forming barrier layers in high aspect ratio vias

Inductive plasma loop enhancing magnetron sputtering

Vault shaped target and magnetron operable in two sputtering modes

High-density plasma for ionized metal deposition capable of exciting a plasma wave

Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer

Integrated process for copper via filling using a magnetron and target producing highly energetic ions

Integrated process for copper via filling

Low temperature integrated via and trench fill process and apparatus

Hybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported thereupon and method of fabricating same

Reliability barrier integration for Cu application

Multi-step magnetron sputtering process

Methods and apparatus for forming barrier layers in high aspect ratio vias

Operating a magnetron sputter reactor in two modes

Integrated copper fill process

Processes to improve electroplating fill

Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source

Deposition film orientation and reflectivity improvement using a self-aligning ultra-thin layer

Blanket-selective chemical vapor deposition using an ultra-thin nucleation layer

Low temperature integrated metallization process and apparatus

Cover layer for a substrate support chuck and method of fabricating same

Self ionized sputtering using a high density plasma source

Bi-layer etch stop for inter-level via

Method to eliminate coil sputtering in an ICP source

Titanium nitride barrier layers

Titanium nitride barrier layers

Process for forming improved titanium-containing barrier layers

Ultrasonic wave assisted contact hole filling

Ultrasonic wave assisted contact hole filling

Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement

Method of application of electrical biasing to enhance metal deposition

Method and associated apparatus to mechanically enhance the deposition of a metal film within a feature

Method for forming titanium silicide in situ

Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug

Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug

Methods and apparatus for forming barrier layers in high aspect ratio vias

Partially filling copper seed layer

Diffusion enhanced ion plating for copper fill

Low temperature integrated metallization process and apparatus

Low temperature integrated metallization process and apparatus

Process for forming improved titanium-containing barrier layers

Self-ionized and inductively-coupled plasma for sputtering and resputtering

Method and apparatus for improved electroplating fill of an aperture

SGS THOMSON MICROELECTRONICS

Method for forming local interconnect for integrated circuits

Local interconnect for integrated circuits

Structure and method for contacts in CMOS devices

Structure and method for contacts in cmos devices

Method for reducing the surface reflectance of a metal layer during semiconductor processing

DING PEIJUN

Self-ionized and inductively-coupled plasma for sputtering and resputtering

Self-ionized and inductively-coupled plasma for sputtering and resputtering

FU JIANMING

Sputtering using an unbalanced magnetron