P

Inventor

CHEN JI-CHENG

TW20 patents

Patents

20 patents
US11302793B2Apr 12, 2022

Transistor gates and method of forming

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11923414B2Mar 5, 2024

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11916124B2Feb 27, 2024

Transistor gates and methods of forming

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11444198B2Sep 13, 2022

Work function control in gate structures

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11411079B1Aug 9, 2022

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11270994B2Mar 8, 2022

Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11075275B2Jul 27, 2021

Metal gate fill for short-channel and long-channel semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10644153B2May 5, 2020

Semiconductor device and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12453153B2Oct 21, 2025

Work-function layers in the gates of pFETs

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12426321B2Sep 23, 2025

Transistor gate structures and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12349410B2Jul 1, 2025

Nanostructure field-effect transistor (NANO-FET) with gates including a seam in p-type work function metal between nanostructures and methods of forming

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12283609B2Apr 22, 2025

Gate structure of transistor including a plurality of work function layers and oxygen device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12170280B2Dec 17, 2024

Method of manufacturing gate structure and method of manufacturing fin-field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12132112B2Oct 29, 2024

Work function control in gate structures

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12051721B2Jul 30, 2024

Methods of forming semiconductor devices including gate barrier layers

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12009264B2Jun 11, 2024

Adjusting work function through adjusting deposition temperature

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855083B2Dec 26, 2023

Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11495661B2Nov 8, 2022

Semiconductor device including gate barrier layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11362002B2Jun 14, 2022

Adjusting work function through adjusting deposition temperature

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11171235B2Nov 9, 2021

Semiconductor device and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61