Inventor
DONG JIN WEN
CN15 patents
Patents
15 patentsUS11133325B2Sep 28, 2021
Memory cell structure of a three-dimensional memory device
YANGTZE MEMORY TECH CO LTD14 citations93
US10867678B2Dec 15, 2020
Three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD8 citations84
US10910390B2Feb 2, 2021
Memory device and forming method thereof
YANGTZE MEMORY TECH CO LTD1 citations72
US10847528B2Nov 24, 2020
Memory cell structure of a three-dimensional memory device
YANGTZE MEMORY TECH CO LTD1 citations72
US10840125B2Nov 17, 2020
Memory structure and method for forming the same
YANGTZE MEMORY TECH CO LTD6 citations72
US10644015B2May 5, 2020
Memory cell structure of a three-dimensional memory device
YANGTZE MEMORY TECH CO LTD3 citations72
US10515975B1Dec 24, 2019
Method for forming dual-deck channel hole structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD6 citations72
US10497708B1Dec 3, 2019
Memory structure and forming method thereof
YANGTZE MEMORY TECH CO LTD4 citations71
US12063780B2Aug 13, 2024
Memory cell structure of a three-dimensional memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US11380701B2Jul 5, 2022
Memory device and forming method thereof
YANGTZE MEMORY TECH CO LTD0 citations61
US11271004B2Mar 8, 2022
Memory device and forming method thereof
YANGTZE MEMORY TECH CO LTD0 citations61
US11211393B2Dec 28, 2021
Memory device and forming method thereof
YANGTZE MEMORY TECH CO LTD0 citations61
US10892274B2Jan 12, 2021
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD0 citations52
US11329061B2May 10, 2022
Method for improving channel hole uniformity of a three-dimensional memory device
YANGTZE MEMORY TECH CO LTD0 citations49
US10692756B1Jun 23, 2020
Method for forming dual damascene interconnect structure
YANGTZE MEMORY TECH CO LTD0 citations41