P

Inventor

LI ZHAOSONG

CN15 patents
⚠️ This page may combine multiple inventors who share the name “LI ZHAOSONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANGTZE MEMORY TECH CO LTD

13 patents
US10868031B2Dec 15, 2020

Multiple-stack three-dimensional memory device and fabrication method thereof

YANGTZE MEMORY TECH CO LTD5 citations83
US10910390B2Feb 2, 2021

Memory device and forming method thereof

YANGTZE MEMORY TECH CO LTD1 citations72
US12575105B2Mar 10, 2026

Multiple-stack three-dimensional memory device and fabrication method thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US11968832B2Apr 23, 2024

Multiple-stack three-dimensional memory device and fabrication method thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US11380701B2Jul 5, 2022

Memory device and forming method thereof

YANGTZE MEMORY TECH CO LTD0 citations61
US11271004B2Mar 8, 2022

Memory device and forming method thereof

YANGTZE MEMORY TECH CO LTD0 citations61
US11211393B2Dec 28, 2021

Memory device and forming method thereof

YANGTZE MEMORY TECH CO LTD0 citations61
US10930662B2Feb 23, 2021

Method for forming staircase structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD0 citations61
US10763099B2Sep 1, 2020

Wafer flatness control using backside compensation structure

YANGTZE MEMORY TECH CO LTD1 citations61
US10651193B2May 12, 2020

Memory device and forming method thereof

YANGTZE MEMORY TECH CO LTD1 citations61
US10529732B2Jan 7, 2020

Method for forming staircase structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD1 citations61
US12347787B2Jul 1, 2025

Three dimensional (3D) memory device and fabrication method

YANGTZE MEMORY TECH CO LTD0 citations43
US10665500B1May 26, 2020

Methods of semiconductor device fabrication

YANGTZE MEMORY TECH CO LTD0 citations40

VANJEE TECH CO LTD

1 patent

UNIV BEIHANG

1 patent