Inventor
HIRAKI SHUNICHI
20 patents
⚠️ This page may combine multiple inventors who share the name “HIRAKI SHUNICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO SHIBAURA ELECTRIC CO
13 patentsUS4507673AMar 26, 1985
Semiconductor memory device
TOKYO SHIBAURA ELECTRIC CO174 citations99
US4485393ANov 27, 1984
Semiconductor device with selective nitride layer over channel stop
TOKYO SHIBAURA ELECTRIC CO37 citations92
US4379726AApr 12, 1983
Method of manufacturing semiconductor device utilizing outdiffusion and epitaxial deposition
TOKYO SHIBAURA ELECTRIC CO33 citations92
US4589004AMay 13, 1986
Semiconductor device monolithically comprising a V-MOSFET and bipolar transistor isolated from each other
TOKYO SHIBAURA ELECTRIC CO54 citations91
US4351894ASep 28, 1982
Method of manufacturing a semiconductor device using silicon carbide mask
TOKYO SHIBAURA ELECTRIC CO24 citations81
US4542400ASep 17, 1985
Semiconductor device with multi-layered structure
TOKYO SHIBAURA ELECTRIC CO19 citations73
US4240096ADec 16, 1980
Fluorine-doped P type silicon
TOKYO SHIBAURA ELECTRIC CO14 citations73
US4560642ADec 24, 1985
Method of manufacturing a semiconductor device
TOKYO SHIBAURA ELECTRIC CO8 citations72
US4521256AJun 4, 1985
Method of making integrated devices having long and short minority carrier lifetimes
TOKYO SHIBAURA ELECTRIC CO7 citations72
US4451303AMay 29, 1984
Diffusion of aluminum
TOKYO SHIBAURA ELECTRIC CO9 citations71
US4647472AMar 3, 1987
Process of producing a semiconductor device
TOKYO SHIBAURA ELECTRIC CO18 citations70
US4200969AMay 6, 1980
Semiconductor device with multi-layered metalizations
TOKYO SHIBAURA ELECTRIC CO6 citations63
US4155802AMay 22, 1979
Method of producing semiconductor device involving the use of silicon nitride as an oxidation mask
TOKYO SHIBAURA ELECTRIC CO4 citations57
TOSHIBA KK
7 patentsUS5321289AJun 14, 1994
Vertical MOSFET having trench covered with multilayer gate film
TOSHIBA KK164 citations98
US5126807AJun 30, 1992
Vertical MOS transistor and its production method
TOSHIBA KK193 citations98
US5242845ASep 7, 1993
Method of production of vertical MOS transistor
TOSHIBA KK121 citations97
US5282018AJan 25, 1994
Power semiconductor device having gate structure in trench
TOSHIBA KK103 citations96
US5554872ASep 10, 1996
Semiconductor device and method of increasing device breakdown voltage of semiconductor device
TOSHIBA KK20 citations92
US4729966AMar 8, 1988
Process for manufacturing a Schottky FET device using metal sidewalls as gates
TOSHIBA KK29 citations92
US4532004AJul 30, 1985
Method of manufacturing a semiconductor device
TOSHIBA KK26 citations82