P

Inventor

HIRAKI SHUNICHI

20 patents
⚠️ This page may combine multiple inventors who share the name “HIRAKI SHUNICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOKYO SHIBAURA ELECTRIC CO

13 patents
US4507673AMar 26, 1985

Semiconductor memory device

TOKYO SHIBAURA ELECTRIC CO174 citations99
US4485393ANov 27, 1984

Semiconductor device with selective nitride layer over channel stop

TOKYO SHIBAURA ELECTRIC CO37 citations92
US4379726AApr 12, 1983

Method of manufacturing semiconductor device utilizing outdiffusion and epitaxial deposition

TOKYO SHIBAURA ELECTRIC CO33 citations92
US4589004AMay 13, 1986

Semiconductor device monolithically comprising a V-MOSFET and bipolar transistor isolated from each other

TOKYO SHIBAURA ELECTRIC CO54 citations91
US4351894ASep 28, 1982

Method of manufacturing a semiconductor device using silicon carbide mask

TOKYO SHIBAURA ELECTRIC CO24 citations81
US4542400ASep 17, 1985

Semiconductor device with multi-layered structure

TOKYO SHIBAURA ELECTRIC CO19 citations73
US4240096ADec 16, 1980

Fluorine-doped P type silicon

TOKYO SHIBAURA ELECTRIC CO14 citations73
US4560642ADec 24, 1985

Method of manufacturing a semiconductor device

TOKYO SHIBAURA ELECTRIC CO8 citations72
US4521256AJun 4, 1985

Method of making integrated devices having long and short minority carrier lifetimes

TOKYO SHIBAURA ELECTRIC CO7 citations72
US4451303AMay 29, 1984

Diffusion of aluminum

TOKYO SHIBAURA ELECTRIC CO9 citations71
US4647472AMar 3, 1987

Process of producing a semiconductor device

TOKYO SHIBAURA ELECTRIC CO18 citations70
US4200969AMay 6, 1980

Semiconductor device with multi-layered metalizations

TOKYO SHIBAURA ELECTRIC CO6 citations63
US4155802AMay 22, 1979

Method of producing semiconductor device involving the use of silicon nitride as an oxidation mask

TOKYO SHIBAURA ELECTRIC CO4 citations57

TOSHIBA KK

7 patents