P

Inventor

TAWADA YOSHIHISA

JP54 patents
⚠️ This page may combine multiple inventors who share the name “TAWADA YOSHIHISA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KANEGAFUCHI CHEMICAL IND

45 patents
US4783368ANov 8, 1988

High heat conductive insulated substrate and method of manufacturing the same

KANEGAFUCHI CHEMICAL IND159 citations99
US5419781AMay 30, 1995

Flexible photovoltaic device

KANEGAFUCHI CHEMICAL IND135 citations98
US5127964AJul 7, 1992

Flexible photovoltaic device

KANEGAFUCHI CHEMICAL IND53 citations96
US4773942ASep 27, 1988

Flexible photovoltaic device

KANEGAFUCHI CHEMICAL IND41 citations96
US4765845AAug 23, 1988

Heat-resistant thin film photoelectric converter

KANEGAFUCHI CHEMICAL IND76 citations96
US4634601AJan 6, 1987

Method for production of semiconductor by glow discharge decomposition of silane

KANEGAFUCHI CHEMICAL IND100 citations96
US4612409ASep 16, 1986

Flexible photovoltaic device

KANEGAFUCHI CHEMICAL IND80 citations96
US4450316AMay 22, 1984

Amorphous silicon photovoltaic device having two-layer transparent electrode

KANEGAFUCHI CHEMICAL IND44 citations96
US5032884AJul 16, 1991

Semiconductor pin device with interlayer or dopant gradient

KANEGAFUCHI CHEMICAL IND61 citations94
US4941032AJul 10, 1990

Semiconductor device

KANEGAFUCHI CHEMICAL IND27 citations93
US4825806AMay 2, 1989

Film forming apparatus

KANEGAFUCHI CHEMICAL IND30 citations93
US4631351ADec 23, 1986

Integrated solar cell

KANEGAFUCHI CHEMICAL IND26 citations93
US4544423AOct 1, 1985

Amorphous silicon semiconductor and process for same

KANEGAFUCHI CHEMICAL IND38 citations93
US4476346AOct 9, 1984

Photovoltaic device

KANEGAFUCHI CHEMICAL IND50 citations93
US5250120AOct 5, 1993

Photovoltaic device

KANEGAFUCHI CHEMICAL IND27 citations92
US5091764AFeb 25, 1992

Semiconductor device having a transparent electrode and amorphous semiconductor layers

KANEGAFUCHI CHEMICAL IND40 citations92
US4907052AMar 6, 1990

Semiconductor tandem solar cells with metal silicide barrier

KANEGAFUCHI CHEMICAL IND51 citations92
US4585537AApr 29, 1986

Process for producing continuous insulated metallic substrate

KANEGAFUCHI CHEMICAL IND51 citations92
US5507880AApr 16, 1996

Amorphous solar module having improved passivation

KANEGAFUCHI CHEMICAL IND47 citations91
US4862227AAug 29, 1989

Semiconductor device and its manufacturing method

KANEGAFUCHI CHEMICAL IND34 citations91
US5066861ANov 19, 1991

X ray detecting device

KANEGAFUCHI CHEMICAL IND23 citations90
US5810705ASep 22, 1998

Developing roller

KANEGAFUCHI CHEMICAL IND29 citations89
US4664890AMay 12, 1987

Glow-discharge decomposition apparatus

KANEGAFUCHI CHEMICAL IND33 citations88
US4875943AOct 24, 1989

Flexible photovoltaic device

KANEGAFUCHI CHEMICAL IND11 citations82
US4797527AJan 10, 1989

Electrode for electric discharge machining and method for producing the same

KANEGAFUCHI CHEMICAL IND20 citations82
US4499331AFeb 12, 1985

Amorphous semiconductor and amorphous silicon photovoltaic device

KANEGAFUCHI CHEMICAL IND13 citations82
US4368284AJan 11, 1983

Polyvinyl chloride composite material

KANEGAFUCHI CHEMICAL IND21 citations81
US5124269AJun 23, 1992

Method of producing a semiconductor device using a wire mask having a specified diameter

KANEGAFUCHI CHEMICAL IND8 citations74
US4711807ADec 8, 1987

Insulating material of non-single crystalline silicon compound

KANEGAFUCHI CHEMICAL IND6 citations74
US4665278AMay 12, 1987

Heat-resistant photoelectric converter

KANEGAFUCHI CHEMICAL IND17 citations74
US4491682AJan 1, 1985

Amorphous silicon photovoltaic device including a two-layer transparent electrode

KANEGAFUCHI CHEMICAL IND7 citations74
US5128736AJul 7, 1992

Light sensitive semiconductor device

KANEGAFUCHI CHEMICAL IND8 citations73
US4937550AJun 26, 1990

Strain sensor

KANEGAFUCHI CHEMICAL IND15 citations73
US4926230AMay 15, 1990

Multiple junction solar power generation cells

KANEGAFUCHI CHEMICAL IND18 citations73
US4754254AJun 28, 1988

Temperature detector

KANEGAFUCHI CHEMICAL IND9 citations73
US4433097AFeb 21, 1984

Vinyl chloride resin talc-embedded composition and method of manufacturing same

KANEGAFUCHI CHEMICAL IND11 citations73
US5264710ANov 23, 1993

Amorphous semiconductor, amorphous semiconductor device using hydrogen radicals

KANEGAFUCHI CHEMICAL IND9 citations72
US5015838AMay 14, 1991

Color sensor having laminated semiconductor layers

KANEGAFUCHI CHEMICAL IND12 citations72
US4956023ASep 11, 1990

Integrated solar cell device

KANEGAFUCHI CHEMICAL IND18 citations72
US5126815AJun 30, 1992

Position sensor and picture image input device

KANEGAFUCHI CHEMICAL IND5 citations70
US4965225AOct 23, 1990

Method of stabilizing amorphous semiconductors

KANEGAFUCHI CHEMICAL IND15 citations70
US5382787AJan 17, 1995

Photoconductive material

KANEGAFUCHI CHEMICAL IND2 citations63
US4869976ASep 26, 1989

Process for preparing semiconductor layer

KANEGAFUCHI CHEMICAL IND3 citations63
US4804608AFeb 14, 1989

Amorphous silicon photoreceptor for electrophotography

KANEGAFUCHI CHEMICAL IND4 citations63
US5025297AJun 18, 1991

Semiconductor light beam position sensor element and a position sensor and a picture image input device each using the same

KANEGAFUCHI CHEMICAL IND3 citations62

HAMAKAWA YOSHIHIRO

4 patents

KANEKA CORP

1 patent

Showing the top 50 of 54 patents by PatentIndex Score.