Inventor
TAWADA YOSHIHISA
JP54 patents
⚠️ This page may combine multiple inventors who share the name “TAWADA YOSHIHISA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KANEGAFUCHI CHEMICAL IND
45 patentsUS4783368ANov 8, 1988
High heat conductive insulated substrate and method of manufacturing the same
KANEGAFUCHI CHEMICAL IND159 citations99
US5419781AMay 30, 1995
Flexible photovoltaic device
KANEGAFUCHI CHEMICAL IND135 citations98
US5127964AJul 7, 1992
Flexible photovoltaic device
KANEGAFUCHI CHEMICAL IND53 citations96
US4773942ASep 27, 1988
Flexible photovoltaic device
KANEGAFUCHI CHEMICAL IND41 citations96
US4765845AAug 23, 1988
Heat-resistant thin film photoelectric converter
KANEGAFUCHI CHEMICAL IND76 citations96
US4634601AJan 6, 1987
Method for production of semiconductor by glow discharge decomposition of silane
KANEGAFUCHI CHEMICAL IND100 citations96
US4612409ASep 16, 1986
Flexible photovoltaic device
KANEGAFUCHI CHEMICAL IND80 citations96
US4450316AMay 22, 1984
Amorphous silicon photovoltaic device having two-layer transparent electrode
KANEGAFUCHI CHEMICAL IND44 citations96
US5032884AJul 16, 1991
Semiconductor pin device with interlayer or dopant gradient
KANEGAFUCHI CHEMICAL IND61 citations94
US4941032AJul 10, 1990
Semiconductor device
KANEGAFUCHI CHEMICAL IND27 citations93
US4825806AMay 2, 1989
Film forming apparatus
KANEGAFUCHI CHEMICAL IND30 citations93
US4631351ADec 23, 1986
Integrated solar cell
KANEGAFUCHI CHEMICAL IND26 citations93
US4544423AOct 1, 1985
Amorphous silicon semiconductor and process for same
KANEGAFUCHI CHEMICAL IND38 citations93
US4476346AOct 9, 1984
Photovoltaic device
KANEGAFUCHI CHEMICAL IND50 citations93
US5250120AOct 5, 1993
Photovoltaic device
KANEGAFUCHI CHEMICAL IND27 citations92
US5091764AFeb 25, 1992
Semiconductor device having a transparent electrode and amorphous semiconductor layers
KANEGAFUCHI CHEMICAL IND40 citations92
US4907052AMar 6, 1990
Semiconductor tandem solar cells with metal silicide barrier
KANEGAFUCHI CHEMICAL IND51 citations92
US4585537AApr 29, 1986
Process for producing continuous insulated metallic substrate
KANEGAFUCHI CHEMICAL IND51 citations92
US5507880AApr 16, 1996
Amorphous solar module having improved passivation
KANEGAFUCHI CHEMICAL IND47 citations91
US4862227AAug 29, 1989
Semiconductor device and its manufacturing method
KANEGAFUCHI CHEMICAL IND34 citations91
US5066861ANov 19, 1991
X ray detecting device
KANEGAFUCHI CHEMICAL IND23 citations90
US5810705ASep 22, 1998
Developing roller
KANEGAFUCHI CHEMICAL IND29 citations89
US4664890AMay 12, 1987
Glow-discharge decomposition apparatus
KANEGAFUCHI CHEMICAL IND33 citations88
US4875943AOct 24, 1989
Flexible photovoltaic device
KANEGAFUCHI CHEMICAL IND11 citations82
US4797527AJan 10, 1989
Electrode for electric discharge machining and method for producing the same
KANEGAFUCHI CHEMICAL IND20 citations82
US4499331AFeb 12, 1985
Amorphous semiconductor and amorphous silicon photovoltaic device
KANEGAFUCHI CHEMICAL IND13 citations82
US4368284AJan 11, 1983
Polyvinyl chloride composite material
KANEGAFUCHI CHEMICAL IND21 citations81
US5124269AJun 23, 1992
Method of producing a semiconductor device using a wire mask having a specified diameter
KANEGAFUCHI CHEMICAL IND8 citations74
US4711807ADec 8, 1987
Insulating material of non-single crystalline silicon compound
KANEGAFUCHI CHEMICAL IND6 citations74
US4665278AMay 12, 1987
Heat-resistant photoelectric converter
KANEGAFUCHI CHEMICAL IND17 citations74
US4491682AJan 1, 1985
Amorphous silicon photovoltaic device including a two-layer transparent electrode
KANEGAFUCHI CHEMICAL IND7 citations74
US5128736AJul 7, 1992
Light sensitive semiconductor device
KANEGAFUCHI CHEMICAL IND8 citations73
US4937550AJun 26, 1990
Strain sensor
KANEGAFUCHI CHEMICAL IND15 citations73
US4926230AMay 15, 1990
Multiple junction solar power generation cells
KANEGAFUCHI CHEMICAL IND18 citations73
US4754254AJun 28, 1988
Temperature detector
KANEGAFUCHI CHEMICAL IND9 citations73
US4433097AFeb 21, 1984
Vinyl chloride resin talc-embedded composition and method of manufacturing same
KANEGAFUCHI CHEMICAL IND11 citations73
US5264710ANov 23, 1993
Amorphous semiconductor, amorphous semiconductor device using hydrogen radicals
KANEGAFUCHI CHEMICAL IND9 citations72
US5015838AMay 14, 1991
Color sensor having laminated semiconductor layers
KANEGAFUCHI CHEMICAL IND12 citations72
US4956023ASep 11, 1990
Integrated solar cell device
KANEGAFUCHI CHEMICAL IND18 citations72
US5126815AJun 30, 1992
Position sensor and picture image input device
KANEGAFUCHI CHEMICAL IND5 citations70
US4965225AOct 23, 1990
Method of stabilizing amorphous semiconductors
KANEGAFUCHI CHEMICAL IND15 citations70
US5382787AJan 17, 1995
Photoconductive material
KANEGAFUCHI CHEMICAL IND2 citations63
US4869976ASep 26, 1989
Process for preparing semiconductor layer
KANEGAFUCHI CHEMICAL IND3 citations63
US4804608AFeb 14, 1989
Amorphous silicon photoreceptor for electrophotography
KANEGAFUCHI CHEMICAL IND4 citations63
US5025297AJun 18, 1991
Semiconductor light beam position sensor element and a position sensor and a picture image input device each using the same
KANEGAFUCHI CHEMICAL IND3 citations62
HAMAKAWA YOSHIHIRO
4 patentsUS4410559AOct 18, 1983
Method of forming amorphous silicon films
HAMAKAWA YOSHIHIRO30 citations92
US4388482AJun 14, 1983
High-voltage photovoltaic cell having a heterojunction of amorphous semiconductor and amorphous silicon
HAMAKAWA YOSHIHIRO49 citations92
US4385200AMay 24, 1983
Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon
HAMAKAWA YOSHIHIRO22 citations82
US4385199AMay 24, 1983
Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon
HAMAKAWA YOSHIHIRO20 citations82
KANEKA CORP
1 patentShowing the top 50 of 54 patents by PatentIndex Score.