Inventor
LUNDBERG DEREK F
US4 patents
Patents
4 patentsUS10381377B2Aug 13, 2019
Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials
MICRON TECHNOLOGY INC14 citations93
US9893083B1Feb 13, 2018
Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials
MICRON TECHNOLOGY INC18 citations93
US10615174B2Apr 7, 2020
Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials
MICRON TECHNOLOGY INC0 citations51
US10121799B2Nov 6, 2018
Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials
MICRON TECHNOLOGY INC0 citations51