Inventor · disambiguated record
Kuang Sheng
Also filed as: SHENG KUANG
4 granted patents·6 pending applications·8 citations·filing 2014–2023
60Inventor score
Files withZJU HANGZHOU GLOBAL SCIENTIFIC AND TECH INNOVATION CENTER4UNIV ZHEJIANG3DELTA ELECTRONICS SHANGHAI CO1JONES LANG LASALLE IP INC1UNIV RUTGERS1
Top patents by PatentIndex Score
10 records- 0183US8912938B1Converter and method of controlling the sameDELTA ELECTRONICS SHANGHAI CO·Filed 2014·Granted Dec 16, 2014·8 cites·20 claims
- 0251US2025045672A1Methods for visualizing relocation analytics and systems thereofJONES LANG LASALLE IP INC·Filed 2023·Application pending·0 cites
- 0350US10658518B2Magnesium zinc oxide-based high voltage thin film transistorUNIV RUTGERS·Filed 2017·Granted May 19, 2020·0 cites·22 claims
- 0450US2023268448A1Fast-Turn-On Floating Island Device and Method for Manufacturing ThereofUNIV ZHEJIANG·Filed 2022·Application pending·0 cites
- 0549US11658237B2Trench-gate power MOSFET with optimized layoutZJU HANGZHOU GLOBAL SCIENTIFIC AND TECH INNOVATION CENTER·Filed 2022·Granted May 23, 2023·0 cites·19 claims
- 0647US2023130726A1Silicon Carbide Trench Gate MOSFET and Method for Manufacturing ThereofZJU HANGZHOU GLOBAL SCIENTIFIC AND TECH INNOVATION CENTER·Filed 2022·Application pending·0 cites
- 0746US2023072827A1Trench gate silicon carbide mosfet with high reliabilityZJU HANGZHOU GLOBAL SCIENTIFIC AND TECH INNOVATION CENTER·Filed 2022·Application pending·0 cites
- 0842US2023039141A1Trench-gate mosfet with electric field shielding regionZJU HANGZHOU GLOBAL SCIENTIFIC AND TECH INNOVATION CENTER·Filed 2021·Application pending·0 cites
- 0940US2021305422A1Sillicon carbide power mosfet with enhanced body diodeUNIV ZHEJIANG·Filed 2021·Application pending·0 cites
- 1039US11671019B2Bridge circuit with series-connected switches and control method thereofUNIV ZHEJIANG·Filed 2021·Granted Jun 6, 2023·0 cites·18 claims
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