Inventor
ROMANOVSKYY SERGIY
CA21 patents
⚠️ This page may combine multiple inventors who share the name “ROMANOVSKYY SERGIY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
8 patentsUS9230631B2Jan 5, 2016
Differential current sensing scheme for magnetic random access memory
TAIWAN SEMICONDUCTOR MFG8 citations83
US8995180B2Mar 31, 2015
Magnetoresistive random access memory (MRAM) differential bit cell and method of use
TAIWAN SEMICONDUCTOR MFG10 citations83
US8976613B2Mar 10, 2015
Differential current sensing scheme for magnetic random access memory
TAIWAN SEMICONDUCTOR MFG7 citations83
US7590017B2Sep 15, 2009
DRAM bitline precharge scheme
TAIWAN SEMICONDUCTOR MFG12 citations81
US8837249B2Sep 16, 2014
Memory macro configuration and method
TAIWAN SEMICONDUCTOR MFG1 citations62
US9299921B2Mar 29, 2016
Magnetoresistive random access memory (MRAM) differential bit cell and method of use
TAIWAN SEMICONDUCTOR MFG0 citations51
US8363488B2Jan 29, 2013
Reference voltage regulator for eDRAM with VSS-sensing
TAIWAN SEMICONDUCTOR MFG1 citations49
US8345498B2Jan 1, 2013
Sense amplifier
TAIWAN SEMICONDUCTOR MFG1 citations49
TAIWAN SEMICONDUCTOR MFG CO LTD
8 patentsUS9685217B2Jun 20, 2017
Memory device with over-refresh and method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations76
US9916883B2Mar 13, 2018
Magnetic random access memory using current sense amplifier for reading cell data and related method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9613672B2Apr 4, 2017
Differential current sensing scheme for magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9529673B2Dec 27, 2016
Memory device having adjustable refresh period and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12315552B2May 27, 2025
Word line delay interlock circuit for write operation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9515640B2Dec 6, 2016
Apparatuses and devices for bias level correction
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9431075B2Aug 30, 2016
Memory macro configuration and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10157664B2Dec 18, 2018
Memory controlling device by using multi-phase control signal and method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations41
ROMANOVSKYY SERGIY
4 patentsUS8995219B2Mar 31, 2015
Word line driver
ROMANOVSKYY SERGIY2 citations60
US8611163B2Dec 17, 2013
Digital DLL for timing control in semiconductor memory
ROMANOVSKYY SERGIY2 citations60
US8988921B2Mar 24, 2015
Boosting word lines
ROMANOVSKYY SERGIY1 citations50
US8400852B2Mar 19, 2013
Circuit with remote amplifier
ROMANOVSKYY SERGIY0 citations50