Inventor
DENISON DEAN R
US10 patents
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LAM RES CORP
9 patentsUS5200232AApr 6, 1993
Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
LAM RES CORP132 citations97
US5750211AMay 12, 1998
Process for depositing a SiOx film having reduced intrinsic stress and/or reduced hydrogen content
LAM RES CORP94 citations95
US5869149AFeb 9, 1999
Method for preparing nitrogen surface treated fluorine doped silicon dioxide films
LAM RES CORP66 citations93
US5503676AApr 2, 1996
Apparatus and method for magnetron in-situ cleaning of plasma reaction chamber
LAM RES CORP81 citations93
US6042901AMar 28, 2000
Method for depositing fluorine doped silicon dioxide films
LAM RES CORP45 citations92
US5368646ANov 29, 1994
Reaction chamber design to minimize particle generation in chemical vapor deposition reactors
LAM RES CORP23 citations91
US6326064B1Dec 4, 2001
Process for depositing a SiOx film having reduced intrinsic stress and/or reduced hydrogen content
LAM RES CORP31 citations90
US5841623ANov 24, 1998
Chuck for substrate processing and method for depositing a film in a radio frequency biased plasma chemical depositing system
LAM RES CORP13 citations71
US5897711AApr 27, 1999
Method and apparatus for improving refractive index of dielectric films
LAM RES CORP6 citations62