Inventor
KASAHARA KENSUKE
JP15 patents
Patents
15 patentsUS6492669B2Dec 10, 2002
Semiconductor device with schottky electrode having high schottky barrier
NEC CORP134 citations98
US6465814B2Oct 15, 2002
Semiconductor device
NEC CORP104 citations98
US6765241B2Jul 20, 2004
Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances
NEC CORP54 citations96
US6552373B2Apr 22, 2003
Hetero-junction field effect transistor having an intermediate layer
NEC CORP65 citations96
US7800131B2Sep 21, 2010
Field effect transistor
NEC CORP48 citations93
US7863648B2Jan 4, 2011
Field effect transistor
NEC CORP38 citations92
US6476431B1Nov 5, 2002
Field effect transistor with barrier layer to prevent avalanche breakdown current from reaching gate and method for manufacturing the same
NEC CORP43 citations92
US6440822B1Aug 27, 2002
Method of manufacturing semiconductor device with sidewall metal layers
NEC CORP19 citations92
US6441391B1Aug 27, 2002
Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate
NEC CORP52 citations92
US6180968B1Jan 30, 2001
Compound semiconductor device and method of manufacturing the same
NEC CORP26 citations92
US5869856AFeb 9, 1999
Field effect transistor
NEC CORP42 citations92
US7071526B2Jul 4, 2006
Semiconductor device having Schottky junction electrode
NEC CORP13 citations84
US4829346AMay 9, 1989
Field-effect transistor and the same associated with an optical semiconductor device
NEC CORP18 citations73
US6093657AJul 25, 2000
Fabrication process of semiconductor device
NEC CORP4 citations62
US4837605AJun 6, 1989
Indium-phosphide hetero-MIS-gate field effect transistor
NEC CORP2 citations62