Inventor
HAYAMA NOBUYUKI
JP9 patents
⚠️ This page may combine multiple inventors who share the name “HAYAMA NOBUYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
7 patentsUS6492669B2Dec 10, 2002
Semiconductor device with schottky electrode having high schottky barrier
NEC CORP134 citations98
US6465814B2Oct 15, 2002
Semiconductor device
NEC CORP104 citations98
US6765241B2Jul 20, 2004
Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances
NEC CORP54 citations96
US6552373B2Apr 22, 2003
Hetero-junction field effect transistor having an intermediate layer
NEC CORP65 citations96
US6440822B1Aug 27, 2002
Method of manufacturing semiconductor device with sidewall metal layers
NEC CORP19 citations92
US6441391B1Aug 27, 2002
Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate
NEC CORP52 citations92
US6507089B1Jan 14, 2003
Semiconductor device, semiconductor integrated circuit, and method for manufacturing semiconductor device
NEC CORP7 citations70