Inventor

WOON WEI-YEN

TW21 patents

⚠️ This page may combine multiple inventors who share the name “WOON WEI-YEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WOON WEI-YEN

TAIWAN SEMICONDUCTOR MFG CO LTD

Semiconductor device having isolation structure formed of low-k dielectric material and method for forming the same

Self-aligned patterning layer for metal gate formation

Radical treatment in supercritical fluid for gate dielectric quality improvement to CFET structure

Semiconductor device, and method for protecting low-k dielectric feature of semiconductor device

Semiconductor device with germanium-based channel

Interconnect structures with conductive carbon layers

Contact structures in semiconductor devices

Graphene wrap-around contact

2D channel transistors with low contact resistance

Graphene layer for low resistance contacts and damascene interconnects

Semiconductor device and manufacturing method thereof

Semiconductor devices with a rare earth metal oxide layer

Metal features of a semiconductor device and methods for forming the same

Selective epitaxy process for the formation of CFET local interconnection

Isolation structure for semiconductor device

Semiconductor structure with conductive carbon layer and method for manufacturing the same

Semiconductor device including dielectrics made of porous organic frameworks, and method of fabricating the same

TAIWAN SEMICONDUCTOR MFG

Source/drain carbon implant and RTA anneal, pre-SiGe deposition

WOON WEI-YEN

Source/drain carbon implant and RTA anneal, pre-SiGe deposition

UNIV NAT TSING HUA

Method for fabricating a vertical heterojunction of metal chalcogenides

UNIV NAT CENTRAL

Ion generation composite target and laser-driven ion acceleration apparatus using the same