Inventor · disambiguated record
Junichi Tsuchimoto
Also filed as: TSUCHIMOTO JUNICHI
22 granted patents·3 pending applications·161 citations·filing 1989–2011
95Inventor score
Files withMITSUBISHI ELECTRIC CORP15RENESAS TECH CORP6SUMITOMO ELECTRIC INDUSTRIES2RENESAS ELECTRONICS CORP1TAKENAGA TAKASHI1
Top patents by PatentIndex Score
25 records- 0168US7863125B2Manufacturing method of CMOS type semiconductor device, and CMOS type semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Jan 4, 2011·3 cites·7 claims
- 0268US6087694ASemiconductor memory device and fabrication method thereofMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jul 11, 2000·26 cites·6 claims
- 0367US4989065AHeat-resistant ohmic electrodeSUMITOMO ELECTRIC INDUSTRIES·Filed 1989·Granted Jan 29, 1991·20 cites·12 claims
- 0458US6159785ASemiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Dec 12, 2000·22 cites·11 claims
- 0557US6734488B1Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2000·Granted May 11, 2004·6 cites·16 claims
- 0656US5518960AMethod of manufacturing a wiring layer including amorphous silicon and refractory metal silicideMITSUBISHI ELECTRIC CORP·Filed 1994·Granted May 21, 1996·23 cites·1 claims
- 0752US6069060AMethod of manufacturing a semiconductor device having a single crystal silicon electrodeMITSUBISHI ELECTRIC CORP·Filed 1997·Granted May 30, 2000·12 cites·16 claims
- 0846US7569890B2Manufacturing method of CMOS type semiconductor device, and CMOS type semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Aug 4, 2009·0 cites·4 claims
- 0946US6756647B2Semiconductor device including nitride layerRENESAS TECH CORP·Filed 2003·Granted Jun 29, 2004·2 cites·6 claims
- 1046US6593611B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 15, 2003·4 cites·19 claims
- 1144US5962886ASemiconductor memory and method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Oct 5, 1999·9 cites·18 claims
- 1244US2011291209A1Magnetic memory deviceTAKENAGA TAKASHI·Filed 2011·Application pending·0 cites
- 1342US2006208325A1Semiconductor device with gate insulating film and manufacturing method thereofRENESAS TECH CORP·Filed 2006·Application pending·0 cites
- 1440US5723887ASemiconductor memory device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Mar 3, 1998·5 cites·3 claims
- 1538US6232628B1Semiconductor device having stacked capacitor structureMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 15, 2001·5 cites·2 claims
- 1637US5963815AMethod for forming a surface-roughened conductive film on a semiconductor waferMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Oct 5, 1999·5 cites·6 claims
- 1737US5091338AProcess for forming heat resistant ohmic electrodeSUMITOMO ELECTRIC INDUSTRIES·Filed 1990·Granted Feb 25, 1992·5 cites·14 claims
- 1836US6323098B1Manufacturing method of a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Nov 27, 2001·5 cites·4 claims
- 1935US5798290AMethod of manufacturing a semiconductor device having a capacitorMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 25, 1998·3 cites·3 claims
- 2034US2004229427A1Semiconductor device with capacitorRENESAS TECH CORP·Filed 2003·Application pending·0 cites
- 2133US5888878AMethod of manufacturing semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 30, 1999·2 cites·6 claims
- 2232US6809001B2Semiconductor device and method for producing a semiconductor deviceRENESAS TECH CORP·Filed 2001·Granted Oct 26, 2004·0 cites·12 claims
- 2332US5426329ASemiconductor device with arsenic doped silicon thin film interconnections or electrodesMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jun 20, 1995·4 cites·7 claims
- 2431US6127240AMethod of manufacturing a semiconductor device having a capacitorMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Oct 3, 2000·0 cites·2 claims
- 2530US6207527B1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Mar 27, 2001·0 cites·5 claims
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