Inventor

FELSL HANS PETER

DE20 patents

⚠️ This page may combine multiple inventors who share the name “FELSL HANS PETER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FELSL HANS PETER

INFINEON TECHNOLOGIES AG

IGBT with reduced feedback capacitance

Soft switching semiconductor component with high robustness and low switching losses

Diode having one or more zones of a first conductivity type and one or more zones of a second conductivity type each located within a layer of the second conductivity type

Semiconductor device including trenches and method of manufacturing a semiconductor device

IGBT having one or more stacked zones formed within a second layer of the IGBT

Power semiconductor transistor

IGBT having at least one first type transistor cell and reduced feedback capacitance

Method for manufacturing a semiconductor device having a channel region in a trench

Semiconductor diode and method of manufacturing a semiconductor diode

Semiconductor device with a field ring edge termination structure and a separation trench arranged between different field rings

INFINEON TECHNOLOGIES AUSTRIA

Method for manufacturing a semiconductor substrate including laser annealing

Method of manufacturing a multi-channel HEMT

Semiconductor device having a floating semiconductor zone

PFIRSCH FRANK

Semiconductor device having a floating semiconductor zone

Semiconductor device having a floating semiconductor zone

FELSL HANS-PETER

IGBT module and a circuit

Semiconductor component with improved dynamic behavior

OSTERMAIER CLEMENS

Multi-channel HEMT

SCHULZE HANS-JOACHIM

Semiconductor device including a dielectric structure in a trench

MAUDER ANTON

Semiconductor device and method for manufacturing the semiconductor device