Inventor

OH CHANGWOO

KR10 patents

⚠️ This page may combine multiple inventors who share the name “OH CHANGWOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

4 patents

US9123774B2Sep 1, 2015

Semiconductor devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD24 citations92

US9520458B2Dec 13, 2016

Resistor formed using resistance patterns and semiconductor devices including the same

SAMSUNG ELECTRONICS CO LTD5 citations69

US9653551B2May 16, 2017

Field effect transistors including fin structures with different doped regions and semiconductor devices including the same

SAMSUNG ELECTRONICS CO LTD4 citations66

US9252274B2Feb 2, 2016

Fin field effect transistors including multiple lattice constants and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations50

SUK SUNG-DAE

2 patents

US9048120B2Jun 2, 2015

Integrated junction and junctionless nanotransistors

SUK SUNG-DAE2 citations61

US9171845B2Oct 27, 2015

Integrated junction and junctionless nanotransistors

SUK SUNG-DAE1 citations51

MING LI

1 patent

US8679910B2Mar 25, 2014

Methods of fabricating devices including source/drain region with abrupt junction profile

MING LI26 citations87

LEE CHOONG-HO

1 patent

US9087723B2Jul 21, 2015

Field effect transistor and method of fabricating the same

LEE CHOONG-HO9 citations80

KANG MYUNG GIL

1 patent

US8941155B2Jan 27, 2015

Fin field effect transistors including multiple lattice constants and methods of fabricating the same

KANG MYUNG GIL14 citations78

AMOSENSE CO LTD

1 patent

US11973013B2Apr 30, 2024

Interposer

AMOSENSE CO LTD0 citations50