Inventor

FENWICK WILLIAM E

US3 patents

⚠️ This page may combine multiple inventors who share the name “FENWICK WILLIAM E”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA ELECTRONIC DEVICES & STORAGE CORP

1 patent

US10174439B2Jan 8, 2019

Nucleation of aluminum nitride on a silicon substrate using an ammonia preflow

TOSHIBA ELECTRONIC DEVICES & STORAGE CORP5 citations78

FENWICK WILLIAM E

1 patent

US8916906B2Dec 23, 2014

Boron-containing buffer layer for growing gallium nitride on silicon

FENWICK WILLIAM E4 citations59

MANUTIUS IP INC

1 patent

US9617656B2Apr 11, 2017

Nucleation of aluminum nitride on a silicon substrate using an ammonia preflow

MANUTIUS IP INC0 citations45