Inventor
RONSHEIM PAUL A
14 patents
⚠️ This page may combine multiple inventors who share the name “RONSHEIM PAUL A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
11 patentsUS7071103B2Jul 4, 2006
Chemical treatment to retard diffusion in a semiconductor overlayer
IBM120 citations97
US5194397AMar 16, 1993
Method for controlling interfacial oxide at a polycrystalline/monocrystalline silicon interface
IBM76 citations95
US6509241B2Jan 21, 2003
Process for fabricating an MOS device having highly-localized halo regions
IBM35 citations92
US6329704B1Dec 11, 2001
Ultra-shallow junction dopant layer having a peak concentration within a dielectric layer
IBM34 citations92
US5729043AMar 17, 1998
Shallow trench isolation with self aligned PSG layer
IBM24 citations92
US6635517B2Oct 21, 2003
Use of disposable spacer to introduce gettering in SOI layer
IBM13 citations83
US6387782B2May 14, 2002
Process of forming an ultra-shallow junction dopant layer having a peak concentration within a dielectric layer
IBM6 citations74
US6194736B1Feb 27, 2001
Quantum conductive recrystallization barrier layers
IBM8 citations73
US6114257ASep 5, 2000
Process for modified oxidation of a semiconductor substrate using chlorine plasma
IBM4 citations62
US5385850AJan 31, 1995
Method of forming a doped region in a semiconductor substrate utilizing a sacrificial epitaxial silicon layer
IBM3 citations62
US6399434B1Jun 4, 2002
Doped structures containing diffusion barriers
IBM3 citations61