P

Inventor

AOKI MASAMI

JP34 patents
⚠️ This page may combine multiple inventors who share the name “AOKI MASAMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

20 patents
US5698869ADec 16, 1997

Insulated-gate transistor having narrow-bandgap-source

TOSHIBA KK415 citations98
US5923073AJul 13, 1999

Method of manufacturing a semiconductor device and semiconductor device manufactured according to the method

TOSHIBA KK70 citations96
US5804851ASep 8, 1998

Semiconductor memory device and manufacturing method thereof

TOSHIBA KK60 citations96
US5747844AMay 5, 1998

Dynamic semiconductor memory device with higher density bit line/word line layout

TOSHIBA KK45 citations96
US5508541AApr 16, 1996

Random access memory device with trench-type one-transistor memory cell structure

TOSHIBA KK61 citations96
US5629539AMay 13, 1997

Semiconductor memory device having cylindrical capacitors

TOSHIBA KK69 citations95
US5736760AApr 7, 1998

Random access memory device with trench-type one-transistor memory cell structure

TOSHIBA KK37 citations93
US5578847ANov 26, 1996

Dynamic semiconductor memory device with higher density bit line/word line layout

TOSHIBA KK23 citations93
US6294422B1Sep 25, 2001

Semiconductor device with high integration density and improved performance

TOSHIBA KK19 citations92
US6281540B1Aug 28, 2001

Semiconductor memory device having bitlines of common height

TOSHIBA KK36 citations92
US6078073AJun 20, 2000

Semiconductor apparatus formed by SAC (self-aligned contact) method and manufacturing method therefor

TOSHIBA KK27 citations92
US6025623AFeb 15, 2000

Semiconductor device with high integration density and improved performance

TOSHIBA KK22 citations92
US5981150ANov 9, 1999

Method for forming a resist pattern

TOSHIBA KK22 citations92
US5384280AJan 24, 1995

Method of manufacturing a semiconductor device isolated by a trench

TOSHIBA KK40 citations92
US6337241B1Jan 8, 2002

Manufacturing method of a semiconductor memory device

TOSHIBA KK9 citations74
US6110647AAug 29, 2000

Method of manufacturing semiconductor device

TOSHIBA KK9 citations74
US6043528AMar 28, 2000

Semiconductor memory device having trench-type capacitor structure using high dielectric film and its manufacturing method

TOSHIBA KK15 citations74
US6372573B2Apr 16, 2002

Self-aligned trench capacitor capping process for high density DRAM cells

TOSHIBA KK10 citations72
US5783336AJul 21, 1998

Mask for exposure

TOSHIBA KK9 citations70
US6483138B1Nov 19, 2002

Semiconductor apparatus formed by SAC (self-aligned contact)

TOSHIBA KK8 citations69

FUJITSU LTD

4 patents

HITACHI LTD

4 patents

BRIDGESTONE CORP

3 patents

BRIDGESTON CORP

1 patent

PARK ALLEN

1 patent

AOKI MASAMI

1 patent