Inventor

PAZ DE ARAUJO CARLOS A

US161 patents

⚠️ This page may combine multiple inventors who share the name “PAZ DE ARAUJO CARLOS A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PAZ DE ARAUJO CARLOS A

SYMETRIX CORP

Ferroelectric field effect transistors for nonvolatile memory applications having functional gradient material

Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current

Process for fabricating layered superlattice materials and making electronic devices including same

Methods and apparatus for material deposition

Non-volatile resistance switching memories and methods of making same

Stabilized resistive switching memory

1T1R resistive memory array with chained structure

Method and apparatus for fabrication of thin films by chemical vapor deposition

Ferroelectric memory and method of operating same

Ferroelectric flat panel displays

Ferroelectric field effect transistor having a gate electrode being electrically connected to the bottom electrode of a ferroelectric capacitor

Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition

Ferroelectric/high dielectric constant integrated circuit and method of fabricating same

Method and apparatus for fabricating silicon dioxide and silicon glass layers in integrated circuits

ZnO thin-film varistors and method of making the same

Method of fabricating barium strontium titanate

Ferroelectric non-volatile memory unit

Integrated circuit with layered superlattice material and method of fabricating same

Method and apparatus for material deposition

Correlated electron memory

Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same

Barrier layers for protecting metal oxides from hydrogen degradation

Interlayer oxide containing thin films for high dielectric constant application

Ferroelectric integrated circuit having hydrogen barrier layer

Method and apparatus for misted liquid source deposition of thin film with reduced mist particle size

Ferroelectric integrated circuit with protective layer incorporating oxygen and method for fabricating same

Method of fabricating ferroelectric integrated circuit using oxygen to inhibit and repair hydrogen degradation

Ferroelectric memory with disturb protection

Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same

Liquid deposition methods of fabricating layered superlattice materials

Misted precursor deposition apparatus and method with improved mist and mist flow

Integrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the same

Method for fabricating thin films of barium strontium titanate without exposure to oxygen at high temperatures

Thin films of ABO3 with excess B-site modifiers and method of fabricating integrated circuits with same

Integrated circuit with layered superlattice material compound

Bottom electrode structure for dielectric capacitors

Chemical vapor deposition process for fabricating layered superlattice materials

Integrated circuit capacitors and process for making the same

Process for making metal oxides

Memory with ferroelectric capacitor connectable to transistor gate

Precursors and processes for making metal oxides

Non-volatile memory

Methods and apparatus for material deposition

Misted deposition apparatus for fabricating an integrated circuit

Method of liquid deposition by selection of liquid viscosity and other precursor properties

Ferroelectric and high dielectric constant transistors

Method for forming an integrated circuit

OLYMPUS OPTICAL CO

Process for fabricating layered superlattice materials and making electronic devices including same

Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

Ferroelectric memory and method of operating same