Inventor

MCMILLAN LARRY D

US103 patents

⚠️ This page may combine multiple inventors who share the name “MCMILLAN LARRY D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MCMILLAN LARRY D

SYMETRIX CORP

Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current

Process for fabricating layered superlattice materials and making electronic devices including same

Methods and apparatus for material deposition

1T1R resistive memory array with chained structure

Method and apparatus for fabrication of thin films by chemical vapor deposition

Ferroelectric memory and method of operating same

Ferroelectric flat panel displays

Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition

Ferroelectric/high dielectric constant integrated circuit and method of fabricating same

Method and apparatus for fabricating silicon dioxide and silicon glass layers in integrated circuits

ZnO thin-film varistors and method of making the same

Method of fabricating barium strontium titanate

Ferroelectric integrated circuit

Ferroelectric non-volatile memory unit

Integrated circuit with layered superlattice material and method of fabricating same

Process for fabricating ferroelectric integrated circuit

Method and apparatus for material deposition

Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same

Barrier layers for protecting metal oxides from hydrogen degradation

Ferroelectric integrated circuit having hydrogen barrier layer

Method and apparatus for misted liquid source deposition of thin film with reduced mist particle size

Multiple station apparatus for liquid source fabrication of thin films

Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same

Liquid deposition methods of fabricating layered superlattice materials

Misted precursor deposition apparatus and method with improved mist and mist flow

Integrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the same

Integrated circuit with layered superlattice material compound

Process for making metal oxides

Memory with ferroelectric capacitor connectable to transistor gate

Precursors and processes for making metal oxides

Non-volatile memory

Methods and apparatus for material deposition

Misted deposition apparatus for fabricating an integrated circuit

Method of liquid deposition by selection of liquid viscosity and other precursor properties

Ferroelectric and high dielectric constant transistors

Method of making ferroelectric FET with polycrystalline crystallographically oriented ferroelectric material

Thin film capacitors on silicon germanium substrate

Misted precursor deposition apparatus and method with improved mist and mist flow

Misted precursor deposition apparatus and method with improved mist and mist flow

UV radiation process for making electronic devices having low-leakage-current and low-polarization fatigue

Method and apparatus for misted liquid source deposition of thin film with reduced mist particle size

Method of making layered superlattice materials for ferroelectric, high dielectric constant, integrated circuit applications

Process for fabricating layered superlattice materials and making electronic devices including same

Method and apparatus for misted deposition of integrated circuit quality thin films

PSZT for integrated circuit applications

Integrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the same

Low imprint ferroelectric material for long retention memory and method of making the same

OLYMPUS OPTICAL CO

Process for fabricating layered superlattice materials and making electronic devices including same

Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

Ferroelectric memory and method of operating same