Inventor
OGAWA TSUTOMU
JP31 patents
⚠️ This page may combine multiple inventors who share the name “OGAWA TSUTOMU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HONDA MOTOR CO LTD
9 patentsUS6422546B1Jul 23, 2002
Active vibration isolating support device
HONDA MOTOR CO LTD61 citations95
US7584815B2Sep 8, 2009
Subframe for vehicle, and bush installation structure
HONDA MOTOR CO LTD50 citations94
US7520514B2Apr 21, 2009
Body frame structure
HONDA MOTOR CO LTD48 citations90
US5556133ASep 17, 1996
Automotive fuel tank mounting assembly
HONDA MOTOR CO LTD49 citations90
US6979023B2Dec 27, 2005
Die cast sub-frame
HONDA MOTOR CO LTD16 citations83
US6612593B2Sep 2, 2003
Suspension structure
HONDA MOTOR CO LTD13 citations83
US7845662B2Dec 7, 2010
Vehicle subframe and bush mounting structure
HONDA MOTOR CO LTD8 citations82
US7513491B2Apr 7, 2009
Engine mount system
HONDA MOTOR CO LTD5 citations62
US11495225B2Nov 8, 2022
Response device, response method, and storage medium
HONDA MOTOR CO LTD0 citations46
FUJITSU LTD
9 patentsUS5176756AJan 5, 1993
Method for fabricating a semiconductor device including a step for cleaning a semiconductor substrate
FUJITSU LTD23 citations92
US4858975AAug 22, 1989
Vacuum chuck apparatus for wet processing wafers
FUJITSU LTD25 citations92
US4476375AOct 9, 1984
Process for selective cutting of electrical conductive layer by irradiation of energy beam
FUJITSU LTD31 citations92
US4381202AApr 26, 1983
Selective epitaxy by beam energy and devices thereon
FUJITSU LTD33 citations92
US5395452AMar 7, 1995
Apparatus made of silica for semiconductor device fabrication
FUJITSU LTD42 citations91
US4906593AMar 6, 1990
Method of producing a contact plug
FUJITSU LTD22 citations82
US5011783AApr 30, 1991
Forming selective single crystal regions in insulated pockets formed on silicon by energy beams and devices formed in the pockets
FUJITSU LTD21 citations81
US4350536ASep 21, 1982
Method of producing dynamic random-access memory cells
FUJITSU LTD19 citations74
US4803884AFeb 14, 1989
Method for measuring lattice defects in semiconductor
FUJITSU LTD17 citations73