P

Inventor

FUSELIER MARK B

US13 patents

Patents

13 patents
US6794256B1Sep 21, 2004

Method for asymmetric spacer formation

ADVANCED MICRO DEVICES INC62 citations94
US6884702B2Apr 26, 2005

Method of making an SOI semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrate

ADVANCED MICRO DEVICES INC16 citations92
US6876037B2Apr 5, 2005

Fully-depleted SOI device

ADVANCED MICRO DEVICES INC18 citations92
US6806111B1Oct 19, 2004

Semiconductor component and method of manufacture

ADVANCED MICRO DEVICES INC33 citations92
US6737332B1May 18, 2004

Semiconductor device formed over a multiple thickness buried oxide layer, and methods of making same

ADVANCED MICRO DEVICES INC30 citations92
US6583016B1Jun 24, 2003

Doped spacer liner for improved transistor performance

ADVANCED MICRO DEVICES INC20 citations91
US7129142B2Oct 31, 2006

Method of forming doped regions in the bulk substrate of an SOI substrate to control the operational characteristics of transistors formed thereabove, and an integrated circuit device comprising same

ADVANCED MICRO DEVICES INC11 citations84
US6919236B2Jul 19, 2005

Biased, triple-well fully depleted SOI structure, and various methods of making and operating same

ADVANCED MICRO DEVICES INC14 citations84
US6780686B2Aug 24, 2004

Doping methods for fully-depleted SOI structures, and device comprising the resulting doped regions

ADVANCED MICRO DEVICES INC15 citations84
US7180136B2Feb 20, 2007

Biased, triple-well fully depleted SOI structure

ADVANCED MICRO DEVICES INC2 citations62
US7544999B2Jun 9, 2009

SOI semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrate

ADVANCED MICRO DEVICES INC1 citations52
US7335568B2Feb 26, 2008

Method of forming doped regions in the bulk substrate of an SOI substrate to control the operational characteristics of transistors formed thereabove, and an integrated circuit device comprising same

ADVANCED MICRO DEVICES INC0 citations52
US7432136B2Oct 7, 2008

Transistors with controllable threshold voltages, and various methods of making and operating same

ADVANCED MICRO DEVICES INC0 citations41