Inventor
TAKAMI HIDEO
JP25 patents
⚠️ This page may combine multiple inventors who share the name “TAKAMI HIDEO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
JX NIPPON MINING & METALS CORP
8 patentsUS7897068B2Mar 1, 2011
Sputtering target, thin film for optical information recording medium and process for producing the same
JX NIPPON MINING & METALS CORP4 citations73
US11651790B2May 16, 2023
Thin film comprising titanium oxide, and method of producing thin film comprising titanium oxide
JX NIPPON MINING & METALS CORP0 citations62
US7892457B2Feb 22, 2011
Sputtering target, thin film for optical information recording medium and process for producing the same
JX NIPPON MINING & METALS CORP1 citations62
US10037830B2Jul 31, 2018
Indium oxide transparent conductive film
JX NIPPON MINING & METALS CORP0 citations51
US9773653B2Sep 26, 2017
Ferromagnetic material sputtering target containing chromium oxide
JX NIPPON MINING & METALS CORP0 citations51
US9761422B2Sep 12, 2017
Magnetic material sputtering target and manufacturing method for same
JX NIPPON MINING & METALS CORP1 citations51
US9732414B2Aug 15, 2017
Co—Cr—Pt-based sputtering target and method for producing same
JX NIPPON MINING & METALS CORP0 citations51
US9589695B2Mar 7, 2017
Indium oxide transparent conductive film
JX NIPPON MINING & METALS CORP0 citations51
NIPPON MINING CO
6 patentsUS7635440B2Dec 22, 2009
Sputtering target, thin film for optical information recording medium and process for producing the same
NIPPON MINING CO22 citations92
US7279211B2Oct 9, 2007
Sputtering target containing zinc sulfide as major component, optical recording medium on which phase change optical disk protective film containing zinc sulfide as major component is formed by using the target, and method for manufacturing the sputtering target
NIPPON MINING CO19 citations92
US7156964B2Jan 2, 2007
Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target
NIPPON MINING CO20 citations92
US7718095B2May 18, 2010
Sputtering target, thin film for optical information recording medium and process for producing the same
NIPPON MINING CO10 citations84
US7484546B2Feb 3, 2009
Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target
NIPPON MINING CO9 citations84
US7344660B2Mar 18, 2008
Sputtering target and process for producing the same
NIPPON MINING CO10 citations84
TAKAMI HIDEO
5 patentsUS8758497B2Jun 24, 2014
Sputtering target of sintered Ti—Nb based oxide, thin film of Ti—Nb based oxide, and method of producing the thin film
TAKAMI HIDEO4 citations72
US9567665B2Feb 14, 2017
Sputtering target for magnetic recording film, and process for producing same
TAKAMI HIDEO4 citations70
US8501052B2Aug 6, 2013
Thin film comprising titanium oxide as main component and sintered compact sputtering target comprising titanium oxide as main component
TAKAMI HIDEO2 citations61
US8771557B2Jul 8, 2014
Indium oxide sintered compact, indium oxide transparent conductive film, and manufacturing method of indium oxide transparent conductive film
TAKAMI HIDEO2 citations60
US8877021B2Nov 4, 2014
Chromic oxide powder for sputtering target, and sputtering target manufactured from such chromic oxide powder
TAKAMI HIDEO0 citations51
IKISAWA MASAKATSU
2 patentsUS9214253B2Dec 15, 2015
Sintered compact of indium oxide system, and transparent conductive film of indium oxide system
IKISAWA MASAKATSU0 citations50
US9663405B2May 30, 2017
Oxide sintered compact, its production method, and raw material powder for producing oxide sintered compact
IKISAWA MASAKATSU0 citations49