Inventor
ARCHER DONALD M
US13 patents
⚠️ This page may combine multiple inventors who share the name “ARCHER DONALD M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NAT SEMICONDUCTOR CORP
9 patentsUS5844299ADec 1, 1998
Integrated inductor
NAT SEMICONDUCTOR CORP59 citations95
US5311115AMay 10, 1994
Enhancement-depletion mode cascode current mirror
NAT SEMICONDUCTOR CORP71 citations95
US5808513ASep 15, 1998
Rail-to-rail input common mode range differential amplifier that operates with very low rail-to-rail voltages
NAT SEMICONDUCTOR CORP42 citations92
US5764101AJun 9, 1998
Rail-to-rail input common mode range differential amplifier that operates with very low rail-to-rail voltages
NAT SEMICONDUCTOR CORP31 citations92
US5386160AJan 31, 1995
Trim correction circuit with temperature coefficient compensation
NAT SEMICONDUCTOR CORP15 citations73
US6605979B1Aug 12, 2003
Trim bit circuit for band-gap reference
NAT SEMICONDUCTOR CORP6 citations62
US7968921B2Jun 28, 2011
Asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions
NAT SEMICONDUCTOR CORP4 citations61
US8377768B2Feb 19, 2013
Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses
NAT SEMICONDUCTOR CORP0 citations51
US7480190B1Jan 20, 2009
Known default data state EPROM
NAT SEMICONDUCTOR CORP0 citations37
BULUCEA CONSTANTIN
3 patentsUS8304835B2Nov 6, 2012
Configuration and fabrication of semiconductor structure using empty and filled wells
BULUCEA CONSTANTIN8 citations83
US8629027B1Jan 14, 2014
Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions
BULUCEA CONSTANTIN4 citations71
US8084827B2Dec 27, 2011
Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses
BULUCEA CONSTANTIN3 citations61