Inventor · disambiguated record
Ruichen Liu
Also filed as: LIU RUICHEN
23 granted patents·1 pending application·612 citations·filing 1983–2007
97Inventor score
Files withMACRONIX INT CO LTD8LUCENT TECHNOLOGIES INC5AT & T BELL LAB4AT & T CORP4AGERE SYSTEMS INC2
Top patents by PatentIndex Score
24 records- 0195US7038230B2Horizontal chalcogenide element defined by a pad for use in solid-state memoriesMACRONIX INTERNATION CO LTD·Filed 2004·Granted May 2, 2006·118 cites·4 claims
- 0291US7683360B2Horizontal chalcogenide element defined by a pad for use in solid-state memoriesMACRONIX INT CO LTD·Filed 2006·Granted Mar 23, 2010·19 cites·8 claims
- 0387US6794694B2Inter-wiring-layer capacitorsAGERE SYSTEMS INC·Filed 2000·Granted Sep 21, 2004·52 cites·8 claims
- 0485US6559499B1Process for fabricating an integrated circuit device having capacitors with a multilevel metallizationAGERE SYSTEMS INC·Filed 2000·Granted May 6, 2003·35 cites·9 claims
- 0584US6927136B2Non-volatile memory cell having metal nano-particles for trapping charges and fabrication thereofMACRONIX INT CO LTD·Filed 2003·Granted Aug 9, 2005·38 cites·15 claims
- 0682US6965522B2Tunneling diode magnetic junction memoryMACRONIX INT CO LTD·Filed 2004·Granted Nov 15, 2005·29 cites·22 claims
- 0781US4914500AMethod for fabricating semiconductor devices which include sources and drains having metal-containing material regions, and the resulting devicesAT & T BELL LAB·Filed 1987·Granted Apr 3, 1990·58 cites·5 claims
- 0877US7371604B2Method of forming a contact structureMACRONIX INT CO LTD·Filed 2006·Granted May 13, 2008·6 cites·11 claims
- 0977US5395787AMethod of manufacturing shallow junction field effect transistorAT & T CORP·Filed 1993·Granted Mar 7, 1995·41 cites·6 claims
- 1075US6147407AArticle comprising fluorinated amorphous carbon and process for fabricating articleLUCENT TECHNOLOGIES INC·Filed 1998·Granted Nov 14, 2000·44 cites·13 claims
- 1174US7135727B2I-shaped and L-shaped contact structures and their fabrication methodsMACRONIX INT CO LTD·Filed 2004·Granted Nov 14, 2006·17 cites·18 claims
- 1268US7880115B2Method for laser annealing to form an epitaxial growth layerMACRONIX INT CO LTD·Filed 2007·Granted Feb 1, 2011·2 cites·6 claims
- 1364US5956618AProcess for producing multi-level metallization in an integrated circuitLUCENT TECHNOLOGIES INC·Filed 1997·Granted Sep 21, 1999·30 cites·8 claims
- 1463US4588928AElectron emission systemAT & T BELL LAB·Filed 1983·Granted May 13, 1986·10 cites·25 claims
- 1560US5438006AMethod of fabricating gate stack having a reduced heightAT & T CORP·Filed 1994·Granted Aug 1, 1995·20 cites·5 claims
- 1655US6149778AArticle comprising fluorinated amorphous carbon and method for fabricating articleLUCENT TECHNOLOGIES INC·Filed 1998·Granted Nov 21, 2000·20 cites·32 claims
- 1752US5008217AProcess for fabricating integrated circuits having shallow junctionsAT & T BELL LAB·Filed 1990·Granted Apr 16, 1991·23 cites·6 claims
- 1851US6110831AMethod of mechanical polishingLUCENT TECHNOLOGIES INC·Filed 1997·Granted Aug 29, 2000·17 cites·16 claims
- 1951US5420058AMethod of making field effect transistor with a sealed diffusion junctionAT & T CORP·Filed 1993·Granted May 30, 1995·20 cites·10 claims
- 2045US7257018B2Method and apparatus for a low write current MRAM having a write magnetMACRONIX INT CO LTD·Filed 2003·Granted Aug 14, 2007·4 cites·20 claims
- 2143US7247503B2Method of laser annealing to form an epitaxial growth layerMACRONIX INT CO LTD·Filed 2004·Granted Jul 24, 2007·0 cites·18 claims
- 2234US5063422ADevices having shallow junctionsAT & T BELL LAB·Filed 1990·Granted Nov 5, 1991·7 cites·10 claims
- 2331US5407859AField effect transistor with landing padAT & T CORP·Filed 1993·Granted Apr 18, 1995·2 cites·12 claims
- 2430US2002004259A1Semicondctor device with multi-level interconnect having embedded loe dielectric constant layer and process for making sameLUCENT TECHNOLOGIES INC·Filed 1999·Application pending·0 cites
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