Inventor
YANG SHENG-JIER
TW15 patents
⚠️ This page may combine multiple inventors who share the name “YANG SHENG-JIER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
8 patentsUS10466731B2Nov 5, 2019
Two-transistor bandgap reference circuit and FinFET device suited for same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US10522643B2Dec 31, 2019
Device and method for tuning threshold voltage by implementing different work function metals in different segments of a gate
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations68
US12581714B2Mar 17, 2026
Semiconductor device and method of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11984483B2May 14, 2024
Semiconductor device and method of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11150680B2Oct 19, 2021
Two-transistor bandgap reference circuit and FinFET device suited for same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12563814B2Feb 24, 2026
Device and method for tuning threshold voltage by implementing different work function metals in different segments of a gate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US11616131B2Mar 28, 2023
Device and method for tuning threshold voltage by implementing different work function metals in different segments of a gate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US10534393B2Jan 14, 2020
Two-transistor bandgap reference circuit and FinFET device suited for same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
TAIWAN SEMICONDUCTOR MFG
6 patentsUS7958465B2Jun 7, 2011
Dummy pattern design for reducing device performance drift
TAIWAN SEMICONDUCTOR MFG118 citations97
US8362573B2Jan 29, 2013
Integrated circuits and manufacturing methods thereof
TAIWAN SEMICONDUCTOR MFG6 citations84
US7943961B2May 17, 2011
Strain bars in stressed layers of MOS devices
TAIWAN SEMICONDUCTOR MFG12 citations84
US8350330B2Jan 8, 2013
Dummy pattern design for reducing device performance drift
TAIWAN SEMICONDUCTOR MFG7 citations83
US7598130B2Oct 6, 2009
Method for reducing layout-dependent variations in semiconductor devices
TAIWAN SEMICONDUCTOR MFG2 citations60
US9385213B2Jul 5, 2016
Integrated circuits and manufacturing methods thereof
TAIWAN SEMICONDUCTOR MFG0 citations52