Inventor
CHOI HUNDAE
KR12 patents
Patents
12 patentsUS11437085B2Sep 6, 2022
Multi-phase clock generator, memory device including multi-phase clock generator, and method of generating multi-phase clock of memory device
SAMSUNG ELECTRONICS CO LTD8 citations83
US11799463B2Oct 24, 2023
Duty adjustment circuit, and delay locked loop circuit and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD4 citations72
US11405029B2Aug 2, 2022
Duty adjustment circuit, and delay locked loop circuit and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US11329654B2May 10, 2022
Delay circuit of delay-locked loop circuit and delay-locked loop circuit
SAMSUNG ELECTRONICS CO LTD4 citations71
US11177814B2Nov 16, 2021
Delay locked loop circuit and semiconductor memory device having the same
SAMSUNG ELECTRONICS CO LTD3 citations69
US11145355B2Oct 12, 2021
Calibration circuit for controlling resistance of output driver circuit, memory device including the same, and operating method of the memory device
SAMSUNG ELECTRONICS CO LTD6 citations69
US11568916B2Jan 31, 2023
Multi-phase clock generator, memory device including multi-phase clock generator, and method of generating multi-phase clock of memory device
SAMSUNG ELECTRONICS CO LTD1 citations60
US11309002B2Apr 19, 2022
Delay locked loop circuit and semiconductor memory device having the same
SAMSUNG ELECTRONICS CO LTD1 citations60
US11705172B2Jul 18, 2023
Memory device, memory system including the same and operating method thereof
SAMSUNG ELECTRONICS CO LTD1 citations57
US12293807B2May 6, 2025
Offset calibration training method for adjusting data receiver offset and memory device therefor
SAMSUNG ELECTRONICS CO LTD0 citations53
US11456046B2Sep 27, 2022
Memory device and clock locking method thereof
SAMSUNG ELECTRONICS CO LTD0 citations50
US11869574B2Jan 9, 2024
Semiconductor memory device and memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations46