Inventor
SHEALY JAMES R
US19 patents
⚠️ This page may combine multiple inventors who share the name “SHEALY JAMES R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CORNELL RES FOUNDATION INC
4 patentsUS7250360B2Jul 31, 2007
Single step, high temperature nucleation process for a lattice mismatched substrate
CORNELL RES FOUNDATION INC104 citations97
US6478871B1Nov 12, 2002
Single step process for epitaxial lateral overgrowth of nitride based materials
CORNELL RES FOUNDATION INC43 citations92
US5003548AMar 26, 1991
High power (1,4 W)AlGaInP graded-index separate confinement heterostructure visible (λ-658 nm) laser
CORNELL RES FOUNDATION INC25 citations92
US5834379ANov 10, 1998
Process for synthesis of cubic GaN on GaAs using NH3 in an RF plasma process
CORNELL RES FOUNDATION INC15 citations73
SHEALY JAMES R
4 patentsUS8791034B2Jul 29, 2014
Chemical vapor deposition process for aluminum silicon nitride
SHEALY JAMES R32 citations93
US9991360B2Jun 5, 2018
Method for forming III-V semiconductor structures including aluminum-silicon nitride passivation
SHEALY JAMES R3 citations72
US9306050B2Apr 5, 2016
III-V semiconductor structures including aluminum-silicon nitride passivation
SHEALY JAMES R4 citations72
US9299821B2Mar 29, 2016
Gated III-V semiconductor structure and method
SHEALY JAMES R5 citations72
ODYSSEY SEMICONDUCTOR INC
4 patentsUS11469348B1Oct 11, 2022
Beryllium doped GaN-based light emitting diode and method
ODYSSEY SEMICONDUCTOR INC3 citations72
US11251295B1Feb 15, 2022
Vertical field effect transistor device and method of fabrication
ODYSSEY SEMICONDUCTOR INC2 citations72
US11942537B2Mar 26, 2024
Vertical field effect transistor device and method of fabrication
ODYSSEY SEMICONDUCTOR INC0 citations61
US11652165B2May 16, 2023
Vertical field effect transistor device and method of fabrication
ODYSSEY SEMICONDUCTOR INC0 citations61
POWER INTEGRATIONS INC
4 patentsUS12062738B2Aug 13, 2024
Beryllium doped GaN-based light emitting diode and method
POWER INTEGRATIONS INC0 citations62
US12046699B2Jul 23, 2024
Beryllium doped GaN-based light emitting diode and method
POWER INTEGRATIONS INC0 citations62
US12512312B1Dec 30, 2025
Vertical gallium nitride containing field effect transistor with silicon nitride passivation and gate dielectric regions
POWER INTEGRATIONS INC0 citations52
US12068161B1Aug 20, 2024
Method for implant and anneal for high voltage field effect transistors
POWER INTEGRATIONS INC0 citations52