Inventor
Pavlopoulos Dimitrios
US16 patents
Patents
16 patentsUS10388665B1Aug 20, 2019
Methods of forming an array of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stack
MICRON TECHNOLOGY INC46 citations96
US10283520B2May 7, 2019
Elevationally-extending string of memory cells individually comprising a programmable charge storage transistor and method of forming an elevationally-extending string of memory cells individually comprising a programmable charge storage transistor
MICRON TECHNOLOGY INC20 citations94
US10014311B2Jul 3, 2018
Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon
MICRON TECHNOLOGY INC9 citations84
US9761599B2Sep 12, 2017
Integrated structures containing vertically-stacked memory cells
MICRON TECHNOLOGY INC9 citations80
US11404571B2Aug 2, 2022
Methods of forming NAND memory arrays
MICRON TECHNOLOGY INC1 citations73
US10446681B2Oct 15, 2019
NAND memory arrays, and devices comprising semiconductor channel material and nitrogen
MICRON TECHNOLOGY INC4 citations73
US10381365B2Aug 13, 2019
Integrated structures containing vertically-stacked memory cells
MICRON TECHNOLOGY INC3 citations72
US11621270B2Apr 4, 2023
Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon
MICRON TECHNOLOGY INC0 citations62
US11309321B2Apr 19, 2022
Integrated structures containing vertically-stacked memory cells
MICRON TECHNOLOGY INC0 citations62
US11094705B2Aug 17, 2021
Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon
MICRON TECHNOLOGY INC0 citations62
US10892268B2Jan 12, 2021
Integrated structures containing vertically-stacked memory cells
MICRON TECHNOLOGY INC0 citations62
US11329062B2May 10, 2022
Memory arrays and methods used in forming a memory array
MICRON TECHNOLOGY INC1 citations60
US10854747B2Dec 1, 2020
NAND memory arrays, devices comprising semiconductor channel material and nitrogen, and methods of forming NAND memory arrays
MICRON TECHNOLOGY INC0 citations52
US10658382B2May 19, 2020
Elevationally-extending string of memory cells individually comprising a programmable charge storage transistor and method of forming an elevationally-extending string of memory cells individually comprising a programmable charge storage transistor
MICRON TECHNOLOGY INC0 citations52
US10381367B2Aug 13, 2019
Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon
MICRON TECHNOLOGY INC0 citations52
US10586807B2Mar 10, 2020
Arrays of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stacks
MICRON TECHNOLOGY INC0 citations51