Inventor
IIJIMA SHINPEI
JP32 patents
⚠️ This page may combine multiple inventors who share the name “IIJIMA SHINPEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
17 patentsUS5091761AFeb 25, 1992
Semiconductor device having an arrangement of IGFETs and capacitors stacked thereover
HITACHI LTD70 citations96
US6235572B1May 22, 2001
Method of making a memory cell having two layered tantalum oxide films
HITACHI LTD66 citations94
US6576946B1Jun 10, 2003
Semiconductor device comprising capacitor cells, bit lines, word lines, and MOS transistors in a memory cell area over a semiconductor substrate
HITACHI LTD24 citations92
US6103566AAug 15, 2000
Method for manufacturing semiconductor integrated circuit device having a titanium electrode
HITACHI LTD22 citations92
US4785342ANov 15, 1988
Static random access memory having structure of first-, second- and third-level conductive films
HITACHI LTD38 citations92
US6544834B1Apr 8, 2003
Method of forming a semiconductor device including a capacitor with tantalum oxide (Ta2O5)
HITACHI LTD26 citations90
US6632721B1Oct 14, 2003
Method of manufacturing semiconductor devices having capacitors with electrode including hemispherical grains
HITACHI LTD13 citations84
US6534375B2Mar 18, 2003
Method of forming a capacitor in a semiconductor integrated circuit device using a metal silicon nitride layer to protect an underlying metal silicide layer from oxidation during subsequent processing steps
HITACHI LTD14 citations83
US6781172B2Aug 24, 2004
Semiconductor device with adhesion-improvement capacitor and process for producing the device
HITACHI LTD6 citations74
US6649465B2Nov 18, 2003
Process for manufacturing a semiconductor memory device including a memory cell selecting transistor and a capacitor with metal electrodes
HITACHI LTD11 citations74
US6544835B2Apr 8, 2003
Method of forming a ruthenium film by CVD
HITACHI LTD5 citations74
US6423593B1Jul 23, 2002
Semiconductor integrated circuit device and process for manufacturing the same
HITACHI LTD6 citations74
US4989056AJan 29, 1991
Semiconductor capacitor
HITACHI LTD9 citations74
US6720603B2Apr 13, 2004
Capacitor structure and a semiconductor device with a first metal layer, a second metal silicide layer formed over the first metal layer and a second metal layer formed over the second metal silicide layer
HITACHI LTD11 citations73
US6664157B2Dec 16, 2003
Semiconductor integrated circuit device and the method of producing the same
HITACHI LTD7 citations73
US6713343B2Mar 30, 2004
Method of forming a semiconductor device with a capacitor including a polycrystalline tantalum oxide film dielectric
HITACHI LTD3 citations60
US6927439B2Aug 9, 2005
Semiconductor memory with strongly adhesive electrode
HITACHI LTD0 citations52
ELPIDA MEMORY INC
8 patentsUS7074669B2Jul 11, 2006
Semiconductor integrated circuit device with capacitor of crown structure and method of manufacturing the same
ELPIDA MEMORY INC90 citations98
US7071071B2Jul 4, 2006
Method of manufacturing semiconductor device
ELPIDA MEMORY INC14 citations82
US7382014B2Jun 3, 2008
Semiconductor device with capacitor suppressing leak current
ELPIDA MEMORY INC8 citations74
US7700942B2Apr 20, 2010
Semiconductor device including an embedded contact plug
ELPIDA MEMORY INC3 citations63
US7498601B2Mar 3, 2009
Phase-change memory device and method of manufacturing same
ELPIDA MEMORY INC4 citations62
US7183170B2Feb 27, 2007
Manufacturing method of semiconductor device
ELPIDA MEMORY INC3 citations62
US7811895B2Oct 12, 2010
Method of manufacturing a semiconductor device having a stacked capacitor
ELPIDA MEMORY INC1 citations52
US7667257B2Feb 23, 2010
Capacitor and process for manufacturing the same
ELPIDA MEMORY INC0 citations52