Inventor

MATSUI YUICHI

JP39 patents

⚠️ This page may combine multiple inventors who share the name “MATSUI YUICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MATSUI YUICHI

RENESAS TECH CORP

Fabrication method for semiconductor integrated devices

Semiconductor integrated circuit device and method of manufacturing the same

Semiconductor device having plural dram memory cells and a logic circuit

Semiconductor device

Semiconductor and semiconductor manufacturing arrangements having a chalcogenide layer formed of columnar crystal grains perpendicular to a main substrate surface

Fabrication method for semiconductor integrated devices

Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same

Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same

Capacitive electrode having semiconductor layers with an interface of separated grain boundaries

Method for manufacturing a ruthenium film for a semiconductor device

Method of making a memory structure having a multilayered contact and a storage capacitor with a composite dielectric layer of crystalized niobium pentoxide and tantalum pentoxide films

Capacitive electrode having semiconductor layers with an interface of separated grain boundaries

HITACHI LTD

Method of manufacturing a semiconductor integrated circuit

Semiconductor integrated circuit and its manufacturing method

Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device

Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device

Semiconductor memory device

Method of forming a capacitor in a semiconductor integrated circuit device using a metal silicon nitride layer to protect an underlying metal silicide layer from oxidation during subsequent processing steps

Semiconductor device and manufacturing method thereof

Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device

Semiconductor device having a capacitor structure including a self-alignment deposition preventing film

Capacitor structure and a semiconductor device with a first metal layer, a second metal silicide layer formed over the first metal layer and a second metal layer formed over the second metal silicide layer

Semiconductor integrated circuit device and the method of producing the same

Semiconductor device and method of fabrication

KOBE STEEL LTD

Schottky diode manufacturing process employing the synthesis of a polycrystalline diamond thin film

Mis type diamond field-effect transistor with a diamond insulator undercoat

Semiconducting diamond light-emitting element

RENESAS ELECTRONICS CORP

Semiconductor device with recording layer containing indium, germanium, antimony and tellurium

Semiconductor device with fluorine-containing interlayer dielectric film to prevent chalcogenide material layer from exfoliating from the interlayer dielectric film and process for producing the same

Capacitive electrode having semiconductor layers with an interface of separated grain boundaries

MATSUI YUICHI

Semiconductor memory

Semiconductor memory

Semiconductor memory

SUMITOMO ELECTRIC INDUSTRIES

Compound semiconductor device with superlattice channel region

Compound semiconductor device

AKIYAMA SATORU

Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same

RENESAS TECHONOLOGY CORP

Fabricating method of semiconductor integrated circuits

HARA YOSHIRO

Vehicle seat

TAKAURA NORIKATSU

Semiconductor device