P

Inventor

JEONG JONG BAE

KR10 patents
⚠️ This page may combine multiple inventors who share the name “JEONG JONG BAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HYNIX SEMICONDUCTOR INC

4 patents
US6791878B2Sep 14, 2004

Word line decoder in nand type flash memory device

HYNIX SEMICONDUCTOR INC18 citations82
US6950339B2Sep 27, 2005

Circuit for generating trim bit signal in a flash memory device

HYNIX SEMICONDUCTOR INC5 citations62
US6961274B2Nov 1, 2005

Sense amplifier

HYNIX SEMICONDUCTOR INC2 citations61
US6909640B2Jun 21, 2005

Block select circuit in a flash memory device

HYNIX SEMICONDUCTOR INC2 citations61

HYUNDAI ELECTRONICS IND

3 patents
US6052305AApr 18, 2000

Erasing circuit for a flash memory device having a triple well structure

HYUNDAI ELECTRONICS IND19 citations82
US5894438AApr 13, 1999

Method for programming and erasing a memory cell of a flash memory device

HYUNDAI ELECTRONICS IND13 citations72
US5946233AAug 31, 1999

Flash memory device having word line latch for multi-bit programming

HYUNDAI ELECTRONICS IND6 citations61

EXCEL SEMICONDUCTOR INC

1 patent
US7668011B2Feb 23, 2010

Serial flash memory device and precharging method thereof

EXCEL SEMICONDUCTOR INC15 citations77

FIDELIX CO LTD

1 patent
US9312024B2Apr 12, 2016

Flash memory device having efficient refresh operation

FIDELIX CO LTD2 citations61

WUHAN XINXIN SEMICONDUCTOR MFG

1 patent
US11978520B2May 7, 2024

Method of erasing flash memory and electronic system

WUHAN XINXIN SEMICONDUCTOR MFG0 citations50