Inventor
PASSLACK MATTHIAS
US92 patents
⚠️ This page may combine multiple inventors who share the name “PASSLACK MATTHIAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
22 patentsUS9214555B2Dec 15, 2015
Barrier layer for FinFET channels
TAIWAN SEMICONDUCTOR MFG CO LTD591 citations99
US9711647B2Jul 18, 2017
Thin-sheet FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations93
US9876088B1Jan 23, 2018
III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9412871B2Aug 9, 2016
FinFET with channel backside passivation layer device and method
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US11769798B2Sep 26, 2023
Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11587786B2Feb 21, 2023
Crystalline semiconductor layer formed in BEOL processes
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11437594B2Sep 6, 2022
Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11088246B2Aug 10, 2021
Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10991576B2Apr 27, 2021
Crystalline semiconductor layer formed in BEOL processes
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10937908B2Mar 2, 2021
Thin-sheet FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10923659B2Feb 16, 2021
Wafers for use in aligning nanotubes and methods of making and using the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10505025B1Dec 10, 2019
Tunnel field-effect transistor and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9647097B2May 9, 2017
Vertical tunnel field effect transistor (FET)
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12051702B2Jul 30, 2024
Crystalline semiconductor layer formed in BEOL processes
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12015083B2Jun 18, 2024
Thin-sheet FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US10680062B2Jun 9, 2020
III-V semiconductor layers, III-V semiconductor device and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US10263073B2Apr 16, 2019
III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12588348B2Mar 24, 2026
Method of manufacturing a effect transistor using carbon nanotubes and a field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218198B2Feb 4, 2025
Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12154903B2Nov 26, 2024
Fin-based field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12107126B2Oct 1, 2024
Steep sloped vertical tunnel field-effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12010856B2Jun 11, 2024
Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
MOTOROLA INC
10 patentsUS5907792AMay 25, 1999
Method of forming a silicon nitride layer
MOTOROLA INC84 citations95
US5665658ASep 9, 1997
Method of forming a dielectric layer structure
MOTOROLA INC35 citations93
US5597768AJan 28, 1997
Method of forming a Ga2 O3 dielectric layer
MOTOROLA INC32 citations93
US5902130AMay 11, 1999
Thermal processing of oxide-compound semiconductor structures
MOTOROLA INC20 citations92
US6159834ADec 12, 2000
Method of forming a gate quality oxide-compound semiconductor structure
MOTOROLA INC20 citations91
US6030453AFeb 29, 2000
III-V epitaxial wafer production
MOTOROLA INC31 citations91
US6094295AJul 25, 2000
Ultraviolet transmitting oxide with metallic oxide phase and method of fabrication
MOTOROLA INC18 citations90
US6025281AFeb 15, 2000
Passivation of oxide-compound semiconductor interfaces
MOTOROLA INC33 citations88
US5945718AAug 31, 1999
Self-aligned metal-oxide-compound semiconductor device and method of fabrication
MOTOROLA INC24 citations88
US5904553AMay 18, 1999
Fabrication method for a gate quality oxide-compound semiconductor structure
MOTOROLA INC12 citations73
FREESCALE SEMICONDUCTOR INC
9 patentsUS7119381B2Oct 10, 2006
Complementary metal-oxide-semiconductor field effect transistor structure having ion implant in only one of the complementary devices
FREESCALE SEMICONDUCTOR INC121 citations98
US6963090B2Nov 8, 2005
Enhancement mode metal-oxide-semiconductor field effect transistor
FREESCALE SEMICONDUCTOR INC135 citations94
US7935620B2May 3, 2011
Method for forming semiconductor devices with low leakage Schottky contacts
FREESCALE SEMICONDUCTOR INC6 citations73
US7692224B2Apr 6, 2010
MOSFET structure and method of manufacture
FREESCALE SEMICONDUCTOR INC4 citations63
US7442654B2Oct 28, 2008
Method of forming an oxide layer on a compound semiconductor structure
FREESCALE SEMICONDUCTOR INC3 citations63
US7432565B2Oct 7, 2008
III-V compound semiconductor heterostructure MOSFET device
FREESCALE SEMICONDUCTOR INC5 citations63
US7429506B2Sep 30, 2008
Process of making a III-V compound semiconductor heterostructure MOSFET
FREESCALE SEMICONDUCTOR INC4 citations63
US6914012B2Jul 5, 2005
Article comprising an oxide layer on a GaAs-based semiconductor structure and method of forming same
FREESCALE SEMICONDUCTOR INC2 citations63
US6756320B2Jun 29, 2004
Method of forming article comprising an oxide layer on a GaAs-based semiconductor structure
FREESCALE SEMICONDUCTOR INC4 citations63
LUCENT TECHNOLOGIES INC
2 patentsUS5821171AOct 13, 1998
Article comprising a gallium layer on a GaAs-based semiconductor, and method of making the article
LUCENT TECHNOLOGIES INC56 citations95
US5550089AAug 27, 1996
Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.
LUCENT TECHNOLOGIES INC39 citations92
BHUWALKA KRISHNA KUMAR
2 patentsTAIWAN SEMICONDUCTOR MFG
2 patentsUS9368604B1Jun 14, 2016
Method of removing threading dislocation defect from a fin feature of III-V group semiconductor material
TAIWAN SEMICONDUCTOR MFG9 citations83
US9355920B2May 31, 2016
Methods of forming semiconductor devices and FinFET devices, and FinFET devices
TAIWAN SEMICONDUCTOR MFG3 citations73
PASSLACK MATTHIAS
1 patentAT & T CORP
1 patentBHUWALKA KRISHNA
1 patentShowing the top 50 of 92 patents by PatentIndex Score.