P

Inventor

PASSLACK MATTHIAS

US92 patents
⚠️ This page may combine multiple inventors who share the name “PASSLACK MATTHIAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

22 patents
US9214555B2Dec 15, 2015

Barrier layer for FinFET channels

TAIWAN SEMICONDUCTOR MFG CO LTD591 citations99
US9711647B2Jul 18, 2017

Thin-sheet FinFET device

TAIWAN SEMICONDUCTOR MFG CO LTD13 citations93
US9876088B1Jan 23, 2018

III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9412871B2Aug 9, 2016

FinFET with channel backside passivation layer device and method

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US11769798B2Sep 26, 2023

Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11587786B2Feb 21, 2023

Crystalline semiconductor layer formed in BEOL processes

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11437594B2Sep 6, 2022

Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11088246B2Aug 10, 2021

Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10991576B2Apr 27, 2021

Crystalline semiconductor layer formed in BEOL processes

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10937908B2Mar 2, 2021

Thin-sheet FinFET device

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10923659B2Feb 16, 2021

Wafers for use in aligning nanotubes and methods of making and using the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10505025B1Dec 10, 2019

Tunnel field-effect transistor and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9647097B2May 9, 2017

Vertical tunnel field effect transistor (FET)

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12051702B2Jul 30, 2024

Crystalline semiconductor layer formed in BEOL processes

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12015083B2Jun 18, 2024

Thin-sheet FinFET device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US10680062B2Jun 9, 2020

III-V semiconductor layers, III-V semiconductor device and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US10263073B2Apr 16, 2019

III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12588348B2Mar 24, 2026

Method of manufacturing a effect transistor using carbon nanotubes and a field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218198B2Feb 4, 2025

Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12154903B2Nov 26, 2024

Fin-based field effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12107126B2Oct 1, 2024

Steep sloped vertical tunnel field-effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12010856B2Jun 11, 2024

Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

MOTOROLA INC

10 patents

FREESCALE SEMICONDUCTOR INC

9 patents

LUCENT TECHNOLOGIES INC

2 patents

BHUWALKA KRISHNA KUMAR

2 patents

TAIWAN SEMICONDUCTOR MFG

2 patents

PASSLACK MATTHIAS

1 patent

AT & T CORP

1 patent

BHUWALKA KRISHNA

1 patent

Showing the top 50 of 92 patents by PatentIndex Score.