Inventor

CHANG VICTOR C Y

TW2 patents

Patents

2 patents

US6854100B1Feb 8, 2005

Methodology to characterize metal sheet resistance of copper damascene process

TAIWAN SEMICONDUCTOR MFG313 citations97

US7028277B2Apr 11, 2006

Process related deviation corrected parasitic capacitance modeling method

TAIWAN SEMICONDUCTOR MFG1 citations49