Inventor
FUJII HIDENORI
JP30 patents
⚠️ This page may combine multiple inventors who share the name “FUJII HIDENORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
22 patentsUS7800204B2Sep 21, 2010
Semiconductor device and method of fabricating the same
MITSUBISHI ELECTRIC CORP10 citations83
US10510904B2Dec 17, 2019
Semiconductor device with backside N-type layer at active region/termination region boundary and extending into action region
MITSUBISHI ELECTRIC CORP2 citations71
US12575167B2Mar 10, 2026
Semiconductor device and method of manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP0 citations62
US11107887B2Aug 31, 2021
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations62
US6404039B1Jun 11, 2002
Semiconductor device with intrinsic base diffusion layer, extrinsic base diffusion layer, and common base diffusion
MITSUBISHI ELECTRIC CORP6 citations62
US6372531B1Apr 16, 2002
Semiconductor device and fabrication process therefor
MITSUBISHI ELECTRIC CORP6 citations62
US6225180B1May 1, 2001
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP4 citations62
US11456376B2Sep 27, 2022
Semiconductor device
MITSUBISHI ELECTRIC CORP1 citations57
US11715789B2Aug 1, 2023
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations51
US11575001B2Feb 7, 2023
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations51
US10763760B2Sep 1, 2020
Semiconductor device and power converter
MITSUBISHI ELECTRIC CORP0 citations51
US9508872B2Nov 29, 2016
Method for manufacturing semiconductor device and pin diode
MITSUBISHI ELECTRIC CORP0 citations51
US9240358B2Jan 19, 2016
Semiconductor device provided with temperature sensing diode and manufacturing method thereof
MITSUBISHI ELECTRIC CORP0 citations51
US9054039B2Jun 9, 2015
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations51
US7241660B2Jul 10, 2007
Manufacturing method of semiconductor device
MITSUBISHI ELECTRIC CORP0 citations51
US6114742ASep 5, 2000
Semiconductor device including crystal defect
MITSUBISHI ELECTRIC CORP0 citations51
US12328933B2Jun 10, 2025
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations50
US10892329B2Jan 12, 2021
Method for manufacturing semiconductor device, and power conversion device
MITSUBISHI ELECTRIC CORP0 citations50
US11830872B2Nov 28, 2023
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations48
US10546961B2Jan 28, 2020
Semiconductor device with non-overlapping impurity layers
MITSUBISHI ELECTRIC CORP0 citations41
US9991212B2Jun 5, 2018
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations41
US9960158B2May 1, 2018
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations41
FUJII HIDENORI
4 patentsUS8841175B2Sep 23, 2014
Vertical trench IGBT and method for manufacturing the same
FUJII HIDENORI3 citations60
US8829519B2Sep 9, 2014
Semiconductor device
FUJII HIDENORI2 citations60
US8420496B2Apr 16, 2013
Semiconductor device and method of fabricating the same
FUJII HIDENORI2 citations60
US8872346B2Oct 28, 2014
Semiconductor device
FUJII HIDENORI0 citations50