P

Inventor

LI KAIWEI

CN17 patents
⚠️ This page may combine multiple inventors who share the name “LI KAIWEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANGTZE MEMORY TECH CO LTD

13 patents
US10957408B1Mar 23, 2021

Non-volatile memory device and control method

YANGTZE MEMORY TECH CO LTD6 citations84
US10991438B1Apr 27, 2021

Method and memory used for reducing program disturbance by adjusting voltage of dummy word line

YANGTZE MEMORY TECH CO LTD7 citations82
US11222674B2Jan 11, 2022

Method of sequentially biasing bias lines in memory device for program disturbance reduction and memory device utilizing same

YANGTZE MEMORY TECH CO LTD5 citations73
US10885990B1Jan 5, 2021

Method of performing programming operation and related memory device

YANGTZE MEMORY TECH CO LTD3 citations72
US12412609B2Sep 9, 2025

Method of reducing program disturbance in memory device and memory device utilizing same

YANGTZE MEMORY TECH CO LTD0 citations62
US12100456B2Sep 24, 2024

Memory device and erasing and verification method thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US11676646B2Jun 13, 2023

Method of reducing program disturbance in memory device and memory device utilizing same

YANGTZE MEMORY TECH CO LTD0 citations62
US11676665B2Jun 13, 2023

Memory device and erasing and verification method thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US11205494B2Dec 21, 2021

Non-volatile memory device and control method

YANGTZE MEMORY TECH CO LTD0 citations62
US11158380B1Oct 26, 2021

Memory device and erasing and verification method thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US11848058B2Dec 19, 2023

Method and memory used for reducing program disturbance by adjusting voltage of dummy word line

YANGTZE MEMORY TECH CO LTD0 citations61
US11626170B2Apr 11, 2023

Method and memory used for reducing program disturbance by adjusting voltage of dummy word line

YANGTZE MEMORY TECH CO LTD0 citations61
US12354668B2Jul 8, 2025

Programming method for semiconductor device and semiconductor device

YANGTZE MEMORY TECH CO LTD0 citations51

UNIV HEFEI TECHNOLOGY

1 patent

UNIV WUHAN

1 patent

QILU UNIV OF TECHNOLOGY SHANDONG ACADEMY OF SCIENCES

1 patent

ALIPAY HANGZHOU INF TECH CO LTD

1 patent