P

Inventor

LIN WEN-CHIN

TW69 patents
⚠️ This page may combine multiple inventors who share the name “LIN WEN-CHIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG

26 patents
US7229883B2Jun 12, 2007

Phase change memory device and method of manufacture thereof

TAIWAN SEMICONDUCTOR MFG88 citations98
US7203129B2Apr 10, 2007

Segmented MRAM memory array

TAIWAN SEMICONDUCTOR MFG113 citations95
US6985383B2Jan 10, 2006

Reference generator for multilevel nonlinear resistivity memory storage elements

TAIWAN SEMICONDUCTOR MFG48 citations93
US7545662B2Jun 9, 2009

Method and system for magnetic shielding in semiconductor integrated circuit

TAIWAN SEMICONDUCTOR MFG31 citations92
US7349243B2Mar 25, 2008

3-parameter switching technique for use in MRAM memory arrays

TAIWAN SEMICONDUCTOR MFG37 citations92
US7170775B2Jan 30, 2007

MRAM cell with reduced write current

TAIWAN SEMICONDUCTOR MFG41 citations92
US7166881B2Jan 23, 2007

Multi-sensing level MRAM structures

TAIWAN SEMICONDUCTOR MFG41 citations92
US7154798B2Dec 26, 2006

MRAM arrays and methods for writing and reading magnetic memory devices

TAIWAN SEMICONDUCTOR MFG38 citations92
US7050290B2May 23, 2006

Integrated capacitor

TAIWAN SEMICONDUCTOR MFG21 citations92
US6885577B2Apr 26, 2005

Magnetic RAM cell device and array architecture

TAIWAN SEMICONDUCTOR MFG26 citations92
US7436698B2Oct 14, 2008

MRAM arrays and methods for writing and reading magnetic memory devices

TAIWAN SEMICONDUCTOR MFG41 citations90
US7719882B2May 18, 2010

Advanced MRAM design

TAIWAN SEMICONDUCTOR MFG10 citations84
US7173846B2Feb 6, 2007

Magnetic RAM and array architecture using a two transistor, one MTJ cell

TAIWAN SEMICONDUCTOR MFG10 citations84
US7099176B2Aug 29, 2006

Non-orthogonal write line structure in MRAM

TAIWAN SEMICONDUCTOR MFG11 citations84
US6909628B2Jun 21, 2005

High density magnetic RAM and array architecture using a one transistor, one diode, and one MTJ cell

TAIWAN SEMICONDUCTOR MFG17 citations84
US8022382B2Sep 20, 2011

Phase change memory devices with reduced programming current

TAIWAN SEMICONDUCTOR MFG19 citations81
US7105879B2Sep 12, 2006

Write line design in MRAM

TAIWAN SEMICONDUCTOR MFG7 citations74
US7035083B2Apr 25, 2006

Interdigitated capacitor and method for fabrication thereof

TAIWAN SEMICONDUCTOR MFG10 citations74
US6873535B1Mar 29, 2005

Multiple width and/or thickness write line in MRAM

TAIWAN SEMICONDUCTOR MFG8 citations74
US7443638B2Oct 28, 2008

Magnetoresistive structures and fabrication methods

TAIWAN SEMICONDUCTOR MFG5 citations63
US7312506B2Dec 25, 2007

Memory cell structure

TAIWAN SEMICONDUCTOR MFG4 citations63
US7172908B2Feb 6, 2007

Magnetic memory cells and manufacturing methods

TAIWAN SEMICONDUCTOR MFG2 citations63
US7042032B2May 9, 2006

Magnetoresistive (MR) magnetic data storage device with sidewall spacer layer isolation

TAIWAN SEMICONDUCTOR MFG5 citations63
US7622358B2Nov 24, 2009

Semiconductor device with semi-insulating substrate portions and method for forming the same

TAIWAN SEMICONDUCTOR MFG2 citations62
US7071478B2Jul 4, 2006

System and method for passing particles on selected areas on a wafer

TAIWAN SEMICONDUCTOR MFG4 citations61
US7858980B2Dec 28, 2010

Reduced active area in a phase change memory structure

TAIWAN SEMICONDUCTOR MFG0 citations52

UNITED MICROELECTRONICS CORP

9 patents

TAIWAN SEMICONDUCTOR MFG CO LTD

3 patents

IND TECH RES INST

2 patents

EVERLIGHT USA INC

2 patents

LIN WEN-CHIN

1 patent

LIN CHIH-CHEN

1 patent

(unassigned)

1 patent

UNIV NATIONAL CHIAO TUNG

1 patent

SHENZHEN GOLDSUN NETWORK INTELLIGENCE TECHNOLOGY CO LTD

1 patent

TAIWAN IND FASTENER CORP

1 patent

CHEN CHIEN-MING

1 patent

TSAO WEI-CHE

1 patent

Showing the top 50 of 69 patents by PatentIndex Score.