Inventor
LIN WEN-CHIN
TW69 patents
⚠️ This page may combine multiple inventors who share the name “LIN WEN-CHIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
26 patentsUS7229883B2Jun 12, 2007
Phase change memory device and method of manufacture thereof
TAIWAN SEMICONDUCTOR MFG88 citations98
US7203129B2Apr 10, 2007
Segmented MRAM memory array
TAIWAN SEMICONDUCTOR MFG113 citations95
US6985383B2Jan 10, 2006
Reference generator for multilevel nonlinear resistivity memory storage elements
TAIWAN SEMICONDUCTOR MFG48 citations93
US7545662B2Jun 9, 2009
Method and system for magnetic shielding in semiconductor integrated circuit
TAIWAN SEMICONDUCTOR MFG31 citations92
US7349243B2Mar 25, 2008
3-parameter switching technique for use in MRAM memory arrays
TAIWAN SEMICONDUCTOR MFG37 citations92
US7170775B2Jan 30, 2007
MRAM cell with reduced write current
TAIWAN SEMICONDUCTOR MFG41 citations92
US7166881B2Jan 23, 2007
Multi-sensing level MRAM structures
TAIWAN SEMICONDUCTOR MFG41 citations92
US7154798B2Dec 26, 2006
MRAM arrays and methods for writing and reading magnetic memory devices
TAIWAN SEMICONDUCTOR MFG38 citations92
US7050290B2May 23, 2006
Integrated capacitor
TAIWAN SEMICONDUCTOR MFG21 citations92
US6885577B2Apr 26, 2005
Magnetic RAM cell device and array architecture
TAIWAN SEMICONDUCTOR MFG26 citations92
US7436698B2Oct 14, 2008
MRAM arrays and methods for writing and reading magnetic memory devices
TAIWAN SEMICONDUCTOR MFG41 citations90
US7719882B2May 18, 2010
Advanced MRAM design
TAIWAN SEMICONDUCTOR MFG10 citations84
US7173846B2Feb 6, 2007
Magnetic RAM and array architecture using a two transistor, one MTJ cell
TAIWAN SEMICONDUCTOR MFG10 citations84
US7099176B2Aug 29, 2006
Non-orthogonal write line structure in MRAM
TAIWAN SEMICONDUCTOR MFG11 citations84
US6909628B2Jun 21, 2005
High density magnetic RAM and array architecture using a one transistor, one diode, and one MTJ cell
TAIWAN SEMICONDUCTOR MFG17 citations84
US8022382B2Sep 20, 2011
Phase change memory devices with reduced programming current
TAIWAN SEMICONDUCTOR MFG19 citations81
US7105879B2Sep 12, 2006
Write line design in MRAM
TAIWAN SEMICONDUCTOR MFG7 citations74
US7035083B2Apr 25, 2006
Interdigitated capacitor and method for fabrication thereof
TAIWAN SEMICONDUCTOR MFG10 citations74
US6873535B1Mar 29, 2005
Multiple width and/or thickness write line in MRAM
TAIWAN SEMICONDUCTOR MFG8 citations74
US7443638B2Oct 28, 2008
Magnetoresistive structures and fabrication methods
TAIWAN SEMICONDUCTOR MFG5 citations63
US7312506B2Dec 25, 2007
Memory cell structure
TAIWAN SEMICONDUCTOR MFG4 citations63
US7172908B2Feb 6, 2007
Magnetic memory cells and manufacturing methods
TAIWAN SEMICONDUCTOR MFG2 citations63
US7042032B2May 9, 2006
Magnetoresistive (MR) magnetic data storage device with sidewall spacer layer isolation
TAIWAN SEMICONDUCTOR MFG5 citations63
US7622358B2Nov 24, 2009
Semiconductor device with semi-insulating substrate portions and method for forming the same
TAIWAN SEMICONDUCTOR MFG2 citations62
US7071478B2Jul 4, 2006
System and method for passing particles on selected areas on a wafer
TAIWAN SEMICONDUCTOR MFG4 citations61
US7858980B2Dec 28, 2010
Reduced active area in a phase change memory structure
TAIWAN SEMICONDUCTOR MFG0 citations52
UNITED MICROELECTRONICS CORP
9 patentsUS6755726B2Jun 29, 2004
Polishing head with a floating knife-edge
UNITED MICROELECTRONICS CORP14 citations81
US8367553B2Feb 5, 2013
Method for manufacturing through-silicon via
UNITED MICROELECTRONICS CORP6 citations70
US10249357B1Apr 2, 2019
Semiconductor device and manufacturing method thereof
UNITED MICROELECTRONICS CORP5 citations67
US10943910B2Mar 9, 2021
Method for forming semiconductor integrated circuit structure
UNITED MICROELECTRONICS CORP0 citations62
US10923481B2Feb 16, 2021
Semiconductor integrated circuit structure
UNITED MICROELECTRONICS CORP0 citations62
US9502303B2Nov 22, 2016
Method for manufacturing semiconductor device with a barrier layer having overhung portions
UNITED MICROELECTRONICS CORP2 citations62
US7070490B2Jul 4, 2006
Vacuum suction membrane for holding silicon wafer
UNITED MICROELECTRONICS CORP5 citations57
US10276367B1Apr 30, 2019
Method for improving wafer surface uniformity
UNITED MICROELECTRONICS CORP0 citations52
US10128251B2Nov 13, 2018
Semiconductor integrated circuit structure and method for forming the same
UNITED MICROELECTRONICS CORP0 citations52
TAIWAN SEMICONDUCTOR MFG CO LTD
3 patentsUS11532341B2Dec 20, 2022
Method for enhancing tunnel magnetoresistance in memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10998024B2May 4, 2021
Method for enhancing tunnel magnetoresistance in memory device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12183379B2Dec 31, 2024
Enhancing tunnel magnetoresistance in memory device comprising a memory cell with a memory element coupled between a switch and a negative resistance device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
IND TECH RES INST
2 patentsEVERLIGHT USA INC
2 patentsLIN WEN-CHIN
1 patentLIN CHIH-CHEN
1 patent(unassigned)
1 patentUNIV NATIONAL CHIAO TUNG
1 patentSHENZHEN GOLDSUN NETWORK INTELLIGENCE TECHNOLOGY CO LTD
1 patentTAIWAN IND FASTENER CORP
1 patentCHEN CHIEN-MING
1 patentTSAO WEI-CHE
1 patentShowing the top 50 of 69 patents by PatentIndex Score.